| PART |
Description |
Maker |
| STGB10NB40LZT4 STGB10NB40LZ |
N-CHANNEL CLAMPED 20A D2PAK INTERNALLY CLAMPED POWERMESH IGBT
N-CHANNEL CLAMPED 20A - D2PAK INTERNALLY CLAMPED PowerMESH IGBT
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| STGB7NB40LZ |
N-CHANNEL CLAMPED 14A - D2PAK INTERNALLY CLAMPED PowerMESH⑩ IGBT
N-CHANNEL CLAMPED 14A - D2PAK INTERNALLY CLAMPED PowerMESH IGBT
|
STMICROELECTRONICS[STMicroelectronics]
|
| STGP20NB37LZ |
N-CHANNEL CLAMPED 20A TO-220 INTERNALLY CLAMPED PowerMESH IGBT N通道钳位20A 220 IGBT的内部钳位PowerMESH
N-CHANNEL CLAMPED 20A TO-220 INTERNALLY CLAMPED PowerMESH IGBT
|
Sharp, Corp.
STMICROELECTRONICS[STMicroelectronics]
|
| STB20NM50FD |
N-CHANNEL 500V 0.20 OHM 20A D2PAK FDMESH POWER MOSFET
N-CHANNEL 500V - 0.20ohm - 20A D2PAK FDmesh⑩Power MOSFET With FAST DIODE
N-CHANNEL 500V - 0.20ohm - 20A D2PAK FDmeshPower MOSFET With FAST DIODE
N-CHANNEL 500V - 0.20ohm - 20A D2PAK FDmesh?Power MOSFET With FAST DIODE
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| STB20NE06LT4 STB20NE06L |
N-CHANNEL 60V - 0.06 OHM - 20A D2PAK STRIPFET POWER MOSFET
N-CHANNEL 60V - 0.06 OHM - 20A D2PAK STRIPFET POWER MOSFET
THERMISTOR, PTC 2.50 OHM .10A 晶体管| MOSFET的| N沟道| 60V的五（巴西）直| 20A条（丁）|63AB
|
ST Microelectronics
ON Semiconductor
|
| STB20NE06 |
N-CHANNEL 60V -0.06 OHM - 20A D2PAK STRIPFET POWER MOSFET
|
ST Microelectronics
|
| STB20NM50 STB20NM50-1 STP20NM50 STP20NM50FP |
N-CHANNEL 500V - 0.20ohm - 20A TO-220/FP/D2PAK/I2PAK MDmeshPower MOSFET
|
STMicroelectronics
|
| STGD5NB120SZT4 STGD5NB120SZ STGD5NB120SZ-1 |
N-CHANNEL 5A -1200V DPAK/IPAK INTERNALLY CLAMPED PowerMESH IGBT
40 个字x 1 线5 x 7 点阵字符和光
N-CHANNEL 5A - 1200V DPAK/IPAK INTERNALLY CLAMPED PowerMESH IGBT N沟道5A 1200伏的DPAK /像是iPak内部钳位PowerMESHIGBT
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
STMicroelectronics N.V.
|
| STB7NC80Z STB7NC80Z-1 STP7NC80ZFP STP7NC80Z STBB7N |
6.5 A, 800 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-CHANNEL MOSFET
New Generation Twisted Paired Multiconductor Audio Cable; Number of Conductors:4; Conductor Size AWG:22; No. Strands x Strand Size:7 x 30; Jacket Material:Polyvinylchloride (PVC); Shielding Material:Aluminum Foil/Polyester Tape
N-CHANNEL 800V - 1.3ohm - 6.5A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH⑩III MOSFET
N-CHANNEL 800V - 1.3 OHM - 6.5A TO-220/TO-220FP/D2PAK/I2PAK ZENER-PROTECTED POWERMESH III MOSFET
N-CHANNEL 800V - 1.3ohm - 6.5A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESHIII MOSFET
N-CHANNEL 800V - 1.3ohm - 6.5A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH?III MOSFET
|
ST Microelectronics
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| HGT1S20N35G3VL HGTP20N35G3VL HGT1S20N35G3VLS HGT1S |
20A/ 350V N-Channel/ Logic Level/ Voltage Clamping IGBTs
20A, 350V N-Channel, Logic Level, Voltage Clamping IGBTs
TRANSISTOR | IGBT | N-CHAN | 380V V(BR)CES | 20A I(C) | TO-263AB
XC9536-6PC44C - NOT RECOMMENDED for NEW DESIGN
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
