| PART |
Description |
Maker |
| STW6NC90Z 7247 STW6NC90 |
N-CHANNEL 900V 2.1OHM 5.2A TO-247 ZENER-PROTECTED POWERMESH III MOSFET
N-CHANNEL 900V - 2.1ohm - 5.2A TO-247 Zener-Protected PowerMESH?III MOSFET
N-CHANNEL 900V 2.1OHM 5.2A TO-247 ZENER-PROTECTED POWERMESH III MOSFET
From old datasheet system
N-CHANNEL MOSFET
N-CHANNEL 900V - 2.1ohm - 5.2A TO-247 Zener-Protected PowerMESH⑩III MOSFET N沟道900V - 2.1ohm - 5.2A47齐纳保护PowerMESH⑩三MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| STD2NC45-1 STQ1NC45R-AP STQ1NC45-AP STD2NC45 STD2N |
N-CHANNEL MOSFET
N-CHANNEL 450V - 4.1ohm - 1.5 A IPAK / TO-92 SuperMESH⑩Power MOSFET
N-channel 450V - 4.1 - 1.5A - IPAK - TO-92 SuperMESH Power MOSFET
N-CHANNEL 450V - 4.1ohm - 1.5 A IPAK / TO-92 SuperMESHPower MOSFET
N-channel 450V - 4.1з - 1.5A - IPAK - TO-92 SuperMESH⑩ Power MOSFET
N-CHANNEL 450V 4.1OHM 1.5A DPAK/IPAK/TO-92 SUPERMESH POWER MOSFET
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| STP9NK65ZFP STP9NK65Z |
N-CHANNEL 650V - 1ohm - 7A TO-220/TO-220FP Zener-Protected SuperMESH?Power MOSFET
N-CHANNEL 650V - 1ohm - 7A TO-220/TO-220FP Zener-Protected SuperMESH⑩Power MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
| SSW4N60B SSI4N60B SSI4N60BTU SSW4N60BTM |
600V N-Channel MOSFET 4 A, 600 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263
600V N-Channel B-FET / Substitute of SSI4N60A
600V N-Channel B-FET / Substitute of SSW4N60A
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| STB3NC60 STB3NC60T4 STB3NC60-1 |
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 3A I(D) | TO-262AA
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 3A I(D) | TO-263AB
N - CHANNEL 600V - 3.3Ohm -3A-D 2 PAK/I 2 PAK PowerMESH II MOSFET
N - CHANNEL 600V - 3.3ohm- 3A - D2PAK/I2PAK PowerMESHII MOSFET
|
SGS Thomson Microelectronics
STMicroelectronics
意法半导
|
| STGB3NB60SD STGB3NB60SDT4 |
N-CHANNEL 3A - 600V D2PAK Power MESHIGBT N沟道3A 600V的D2PAK封装IGBT的电力网格⑩
Transient Surge Protection Thyristor; Package/Case:6-SOIC; Current, It av:2.2A; Reel Quantity:1500; Capacitance:100pF; Forward Current:5A; Forward Voltage:12V; Holding Current:100uA; Mounting Type:Surface Mount N沟道3A 600V的IGBT的采用D2PAK POWERMESH
N-CHANNEL 3A - 600V D2PAK Power MESH IGBT
N-CHANNEL 3A - 600V D2PAK POWERMESH IGBT
N-CHANNEL 3A - 600V D2PAK Power MESH⑩ IGBT
|
ST Microelectronics
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| FQA10N60C |
600V N-Channel MOSFET
600V N-Channel Advance Q-FET C-Series
|
FAIRCHILD SEMICONDUCTOR CORP
FAIRCHILD[Fairchild Semiconductor]
|
| FQP5N60C FQPF5N60C |
600V N-Channel Advance Q-FET C-Series
600V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQU5N60C FQD5N60C FQD5N60CTM FQD5N60CTF FQU5N60CTU |
600V N-Channel Advance QFET C-Series
600V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRFBC30AS IRFBC30L IRFBC30AL IRFBC30ASTRL IRFBC30A |
600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
600V Single N-Channel HEXFET Power MOSFET in a TO-262 package
HEXFET? Power MOSFET
Power MOSFET(Vdss=600V/ Rds(on)max=2.2ohm/ Id=3.6A)
600V,3.6A,N-Channel HEXFET Power MOSFET for SMPS(600V,3.6A,N沟道 HEXFET 功率MOS场效应管,用于开关模式电
Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) 功率MOSFET（减振钢板基本\u003d 600V电压的Rds（on）最大值\u003d 2.2ohm，身份证\u003d 3.6A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| STF9NK60ZD STB9NK60ZD STB9NK60ZDT4 STP9NK60ZD |
N-CHANNEL 600V - 0.85 OHM - 7A TO-220/TO-220FP/D2PAK FAST DIODE SUPERMESH MOSFET
N-CHANNEL 600V - 0.85OHM - 7A TO-220/TO-220FP/DPAK SUPERFREDMESH MOSFET
From old datasheet system
N-CHANNEL 600V - 0.85? - 7A TO-220/TO-220FP/DPAK SuperFREDMesh MOSFET
N-CHANNEL 600V - 0.85 - 7A TO-220/TO-220FP/DPAK SuperFREDMesh MOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
