| PART |
Description |
Maker |
| M6MGT331S8AKT M6MGB331S8AKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation
|
| M6MGB331S8AKT M6MGT331S8AKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation.
|
| MR27V6452DMA MR27V6452D |
4,194,304-Word x 16-Bit or 8,388,608-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM
|
OKI[OKI electronic componets]
|
| MR26V25605J MR26V25605J-XXXMB |
8M-Word x 32Bit or 64M-Word x 16Bit P2ROM 8M-Word x 32-bit or 16M-Word x 16-BIt P2ROM
|
OKI electronic components OKI Semiconductor OKI[OKI electronic componets]
|
| UPD23C32380GZ-MJH UPD23C32340GZ-MJH UPD23C32340F9- |
32M-BIT MASK-PROGRAMMABLE ROM 4M-WORD BY 8-BIT (BYTE MODE) / 2M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE 32兆位掩膜可编程ROM的分位(字节模式 200万字6位(字模式)页面访问模式 CAP 3PF 16V /-0.1PF THIN-FILM SN90/PB10/NI 30PPM TR-7-PA
|
http:// NEC, Corp. NEC Corp.
|
| R1WV6416RSD-5SI R1WV6416RSD-5SR R1WV6416RSD-7SI R1 |
64Mb Advanced LPSRAM (4M word x 16bit / 8M word x 8bit)
|
http:// Renesas Electronics Corporation
|
| I1LV3216ISD-5SI I1LV3216ISD-7SI R1LV3216RSD-5S R1L |
32Mb Advanced LPSRAM (2M word x 16bit / 4M word x 8bit)
|
Renesas Electronics Corporation
|
| UPD23C64040JL UPD23C64040JLGX-XXX UPD23C64040JLGY- |
64M-BIT MASK-PROGRAMMABLE ROM 8M-WORD BY 8-BIT (BYTE MODE) / 4M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE
|
NEC[NEC]
|
| UPD23C64000JL UPD23C64000JLGX-XXX UPD23C64000JLGY- |
64M-BIT MASK-PROGRAMMABLE ROM 8M-WORD BY 8-BIT (BYTE MODE) / 4M-WORD BY 16-BIT (WORD MODE)
|
NEC[NEC]
|
| MR26V25655J |
8M-Word x 32Bit or 64M-Word x 16Bit P2ROM
|
OKI electronic components OKI Semiconductor
|
| HM514400A HM514400AJ-6 HM514400AJ-7 HM514400AJ-8 H |
1,048,576-word x 4-bid DRAM, 70ns 1,048,576-WORD x 4-BIT DYNAMIC RAM 1,048,576-word x 4-bid DRAM, 60ns 1,048,576-word x 4-bid DRAM, 80ns
|
HITACHI[Hitachi Semiconductor]
|