| PART |
Description |
Maker |
| MT5C1009DCJ-35/883C MT5C1009SOJ-35/883C MT5C1009F- |
128K x 8 SRAM with chip and output enable
128K x 8 SRAM WITH CHIP & OUTPUT ENABLE
Circular Connector; Body Material:Aluminum Alloy; Series:MS3110; No. of Contacts:21; Connector Shell Size:22; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Socket RoHS Compliant: No
128K x 8 SRAM WITH CHIP & OUTPUT ENABLE 128K的8的SRAM在芯
128K x 8 SRAM WITH CHIP & OUTPUT ENABLE
|
Austin Semiconductor
Electronic Theatre Controls, Inc.
|
| P4C1023-55CC P4C1023-55CI P4C1023-55CJC P4C1023-55 |
LOW POWER 128K x 8 SINGLE CHIP ENABLE CMOS STATIC RAM 128K X 8 STANDARD SRAM, 70 ns, CDIP32
LOW POWER 128K x 8 SINGLE CHIP ENABLE CMOS STATIC RAM 128K X 8 STANDARD SRAM, 70 ns, CDSO32
LOW POWER 128K x 8 SINGLE CHIP ENABLE CMOS STATIC RAM 128K X 8 STANDARD SRAM, 55 ns, CDIP32
|
Pyramid Semiconductor C...
Pyramid Semiconductor Corporation
Pyramid Semiconductor, Corp.
|
| ENA1095 LC87F1HC8SA |
CMOS IC FROM 128K byte, RAM 16384 byte on-chip 8-bit 1-chip Microcontroller with USB-host controller
|
Sanyo Semicon Device
|
| LC875CB2A LC875CC8A |
ROM 128K/112K byte, RAM 4096 byte on-chip 8-bit 1-chip Microcontroller
|
Sanyo Semicon Device
|
| CY7C1019CV33 CY7C1019CV33-12VI CY7C1019CV33-15VC C |
128K x 8 Static RAM 128K的8静态RAM
JT 26C 26#20 SKT RECP 128K X 8 STANDARD SRAM, 8 ns, PDSO32
128K x 8 Static RAM 128K X 8 STANDARD SRAM, 12 ns, PDSO32
128K x 8 Static RAM 128K X 8 STANDARD SRAM, 15 ns, PDSO32
128K x 8 Static RAM 128K X 8 STANDARD SRAM, 10 ns, PDSO32
128K x 8 Static RAM 128K X 8 STANDARD SRAM, 8 ns, PDSO32
Memory : Async SRAMs
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
CYPRESS[Cypress Semiconductor]
|
| AT28C010E-12FM/883 AT28C010E-12EC AT28C010-12EM AT |
120NS, 32FLTPCK, 883C; LEV B COMPLIANT(EEPROM) 128K X 8 EEPROM 5V, 120 ns, CDFP32
128K X 8 EEPROM 5V, 120 ns, CQCC32
120NS, 32 LCC, MIL TEMP(EEPROM)
128K X 8 EEPROM 5V, 150 ns, CDFP32
128K X 8 EEPROM 5V, 200 ns, CDIP32
128K X 8 EEPROM 5V, 250 ns, CDIP32
|
Atmel, Corp.
ATMEL CORP
|
| LC87F7DC8A |
CMOS IC FROM 128K byte, RAM 4K byte on-chip 8-bit 1-chip Microcontroller
|
Sanyo Semicon Device
|
| LC87F5JC8A |
FROM 128K byte, RAM 4096 byte on-chip 8-bit 1-chip Microcontroller
|
Sanyo Semicon Device
|
| LC87F7DC8A10 |
FROM 128K byte, RAM 4K byte on-chip 8-bit 1-chip Microcontroller
|
Sanyo Semicon Device
|
| AM28F020 AM28F021 AM28F020-120EC AM28F020-120EE AM |
3 Megabit (256 K x 8-Bit) CMOS 12.0 Volt Bulk Erase Flash Memory(509.20 k)
Rectangular Connector; Body Material:Polyester; Series:8016; Number of Contacts:38; Contact Material:Phosphor Bronze; Contact Plating:Gold Over Nickel; Gender:Male; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes
Rectangular Connector; Body Material:Polyester; Series:8016; Number of Contacts:38; Contact Material:Phosphor Bronze; Contact Plating:Gold Over Nickel; Gender:Female; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 2兆位56亩8位）的CMOS 12.0伏，整体擦除闪存
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 90 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 90 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 2兆位256亩8位）的CMOS 12.0伏，整体擦除闪存
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 200 ns, PQCC32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 150 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 120 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 120 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 200 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 150 ns, PQCC32
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| M27C1001-15B1 1001-80F6 M27C1001-20B3 M27C1001-35F |
128K X 8 UVPROM, 80 ns, CDIP32
128K X 8 OTPROM, 200 ns, PDIP32
128K X 8 UVPROM, 35 ns, CDIP32
128K X 8 OTPROM, 70 ns, PQCC32
128K X 8 UVPROM, 200 ns, CDIP32
128K X 8 OTPROM, 120 ns, PDSO32
128K X 8 OTPROM, 250 ns, PDSO32
128K X 8 OTPROM, 45 ns, PQCC32
128K X 8 UVPROM, 100 ns, CDIP32
128K X 8 OTPROM, 100 ns, PDIP32
|
意法半导
STMICROELECTRONICS
|
| GS84032T-166 GS84032B-100 GS84032B-166 GS84032B-15 |
128K X 32 CACHE SRAM, 8 ns, PBGA119
4Mb56K x 18Bit) Synchronous Burst SRAM(4M位（256K x 18位）同步静态RAM（带2位脉冲地址计数器）)
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs
|
GSI Technology
|
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