| PART |
Description |
Maker |
| 1N4683 1N4684 1N4717 1N4706 1N4713 1N4685 1N4694 1 |
Silicon Epitaxial Planar Z-Diodes 硅外延平面的Z -二极
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压43V，最大反向电.01μA的硅外延平面型齐纳二极管) 硅外延平面的Z -二极管的稳定电压（典型齐纳电3V，最大反向电流降.01μA的硅外延平面型齐纳二极管
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压12V，最大反向电.05μA的硅外延平面型齐纳二极管) 硅外延平面的Z -二极管的稳定电压（典型齐纳电12V的，最大反向电.05μA的硅外延平面型齐纳二极管
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压14V，最大反向电.05μA的硅外延平面型齐纳二极管) 硅外延平面的Z -二极管的稳定电压（典型齐纳电14V的，最大反向电.05μA的硅外延平面型齐纳二极管
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压2.7V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压2.4V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压2.0V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压1.8V，最大反向电.5μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压3.0V，最大反向电.8μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压6.2V，最大反向电0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压3.3V，最大反向电.5μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压4.3V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压8.2V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压8.7V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压10V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压6.8V，最大反向电0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压5.6V，最大反向电0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压9.1V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压2.2V，最大反向电.0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压4.7V，最大反向电0μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压3.6V，最大反向电.5μA的硅外延平面型齐纳二极管)
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压7.5V，最大反向电0μA的硅外延平面型齐纳二极管)
PC 5/10-G-7,62
PCV 5/ 4-G-7,62
Silicon Epitaxial Planar Z-Diode for Voltage Stabilization(典型齐纳电压5.1V，最大反向电0μA的硅外延平面型齐纳二极管)
From old datasheet system
Silicon Epitaxial Planar Z?Diodes
|
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
TFUNK[Vishay Telefunken]
|
| KDZ16FV KDZ12FV KDZ15FV KDZ10FV KDZ6.2FV |
SILICON EPITAXIAL PLANAR DIODE
16.2 V, 0.1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
SILICON EPITAXIAL PLANAR DIODE
|
KEC(Korea Electronics)
|
| 1N4149 1N4449 1N4450 1N4447 1N914 1N4454 1N4150 1N |
VC-MP-K4
Signal or Computer Diode
Silicon Epitaxial Planar Diodes
SMALL SIGNAL SWITCHING DIODE
SILICON EPITAXIAL PLANAR DIODE
|
SEMTECH[Semtech Corporation]
Microsemi
Honey Technology
Chenyi Electronics
|
| 1N4148D2B-JQRS.GRPC 1N4148D2A |
0.2 A, 75 V, SILICON, SIGNAL DIODE HERMETIC SEALED, CERAMIC, DLCC2 VARIANT B, 2 PIN
SILICON EPITAXIAL PLANAR DIODE
|
TT electronics Semelab, Ltd.
Seme LAB
|
| KDV310E |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TV Tuning
|
KEC(Korea Electronics)
|
| KDV350 |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO)
|
KEC[KEC(Korea Electronics)]
|
| KDV287 |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(UHF SHF TUNING)
|
KEC[KEC(Korea Electronics)]
|
| KDV804 KDV804M KDV804S |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(TUNING OF SEPERATE RESONANT CIRCUIT)
|
KEC Holdings
KEC[KEC(Korea Electronics)]
Korea Electronics (KEC)
|
| KDV257E |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF/VHF BAND)
|
KEC(Korea Electronics)
|
| KDV348E |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE
|
KEC(Korea Electronics)
|
| HZM6.8ZFA |
Silicon Epitaxial Planar Zener Diode for Surge Absorb(用于浪涌电流吸收的平面外延齐纳二极管)
Silicon Epitaxial Planar Zener Diode for Surge Absorb(?ㄤ?娴???垫??告???钩?㈠?寤堕?绾充????)
|
Hitachi,Ltd.
|
