| PART |
Description |
Maker |
| HUF76432P3 FN4673 HUF76432S3S HUF76432S3ST |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 56A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 60V的五（巴西）直|6A条（丁）|63AB
Dual Differential Drivers And Receivers 16-TSSOP -40 to 85 59 A, 60 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
55A, 60V, 0.019 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
From old datasheet system
|
Intersil, Corp.
Intersil Corporation
|
| HUF75332S3S HUF75332G3 HUF75332P3 |
60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs(60A, 55V, 0.019 Ω,N沟道,UltraFET功率MOS场效应管)
|
Intersil Corporation
|
| STP60NE03L-12 6077 |
N-CHANNEL Power MOSFET
N - CHANNEL 30V - 0.009 ohm - 60A - T0-220 STripFET POWER MOSFET -通道30V 0.009欧姆-0A T0 220 STripFET功率MOSFET
From old datasheet system
N - CHANNEL 30V - 0.009 - 60A - T0-220 STripFET TM POWER MOSFET
N - CHANNEL 30V - 0.009 Ohms - 60A - T0-220 STripFET POWER MOSFET
|
ST Microelectronics
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| STP80N20M5 STB80N20M5 |
N-channel 200 V, 0.019 Ohm typ., 61 A MDmesh(TM) V Power MOSFET in D2PAK Package
65 A, 200 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-channel 200 V, 0.019 ohm, 61 A, TO-220, D2PAK
|
ST Microelectronics
STMICROELECTRONICS
|
| HUF75332S3S HUF75332P3 HUF75332G3 FN4489 |
60A/ 55V/ 0.019 Ohm/ N-Channel UltraFET Power MOSFETs
60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| M2001H |
Adjustable Carbon Attenuator, Power rating .25 watt, Temperature limits -25 degrees C to 70 degrees C, Impedance 75 ohms, 50 ohms, 60 ohms on request
|
Vishay
|
| BUK9Y19-75B |
N-channel TrenchMOS logic level FET 48.2 A, 75 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235
|
NXP Semiconductors N.V.
|
| NTQD4154Z |
7.5 A, 20 V, 0.019 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
ON SEMICONDUCTOR
|
| STW90NF20 |
N-channel 200 V, 0.019 Ω, 83 A, TO-247 low gate charge STripFET Power MOSFET
N-channel 200 V, 0.019 ヘ, 83 A, TO-247 low gate charge STripFET⑩ Power MOSFET
|
STMicroelectronics
|
| STD50N03L-1 |
40 A, 30 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AB
|
STMICROELECTRONICS
|
| MSAFZ15N40A MSAFX14N100A FSE1850 FSE1350 FSE1540 F |
N Channel MOSFET; Package: CoolPack1; trr (nsec): 120; t(on) (nsec): 180; ID (A): 15; RDS(on) (Ohms): 0.3; PD (W): 300; BVDSS (V): 400; Rq: 0.4; VSD (V): 1.5 SMALL SIGNAL, FET
N Channel MOSFET; Package: CoolPack1; trr (nsec): 850; t(on) (nsec): 60; ID (A): 14; RDS(on) (Ohms): 0.82; PD (W): 310; BVDSS (V): 1000; Rq: 0.25; VGS(th) (V): 4; VSD (V): 1.5 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1200; t(on) (nsec): 35; ID (A): 18; RDS(on) (Ohms): 0.28; PD (W): 150; BVDSS (V): 500; Rq: 0.9; VSD (V): 1.8 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1200; t(on) (nsec): 27; ID (A): 13; RDS(on) (Ohms): 0.4; PD (W): 125; BVDSS (V): 500; Rq: 1; VSD (V): 1.4 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1000; t(on) (nsec): 35; ID (A): 15; RDS(on) (Ohms): 0.3; PD (W): 125; BVDSS (V): 400; Rq: 1; VSD (V): 1.6 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1000; t(on) (nsec): 33; ID (A): 20; RDS(on) (Ohms): 0.21; PD (W): 150; BVDSS (V): 400; Rq: 0.9; VSD (V): 1.8 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-257; trr (nsec): 660; t(on) (nsec): 17; ID (A): 5; RDS(on) (Ohms): 1; PD (W): 50; BVDSS (V): 400; Rq: 2; VSD (V): 1.6 5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Microsemi, Corp.
|
| STS3DNF30L 6336 |
N-Channel 30V-0.055Ω-3.5A-SO-8 PowerMESH MOSFET(N沟道MOSFET) N沟道30V的，0.055Ω- 3.5A SO - 8封装PowerMESH MOSFET的（不适用沟道MOSFET的）
N - CHANNEL 30V - 0.055 - 3.5A - SO-8 PowerMESH TM MOSFET
From old datasheet system
N - CHANNEL 30V - 0.055ohm - 3.5A - SO-8 PowerMESH MOSFET
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
|
