| PART |
Description |
Maker |
| 2N5401 |
PNP Transistor Plastic-Encapsulate Transi stors
|
SeCoS Halbleitertechnologie GmbH
|
| GT50J121 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications
|
TOSHIBA
|
| MJE18006-D |
SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications
|
ON Semiconductor
|
| MJE18008 MJE18008G MJF18008 |
NPN Bipolar Power Transistor For Switching Power Supply Applications
|
ON Semiconductor
|
| MJE13007-P |
NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS
|
Unisonic Technologies
|
| 2SD2115 2SD2115L 2SD2115S |
Bipolar power switching transistor
Silicon NPN Epitaxial Planar(Low frequency power amplifier)
|
HITACHI[Hitachi Semiconductor]
|
| FA7622CP FA7622CPE FA7622CE |
Bipolar IC For Switching Power Supply Control
|
COLLMER SEMICONDUCTOR INC
FUJI[Fuji Electric]
|
| FA5304AP FA5304APS FA5305AP FA5305APS FA5304AS FA5 |
Bipolar IC For Switching Power Supply Control
|
COLLMER SEMICONDUCTOR INC
FUJI[Fuji Electric]
|
| MJE18204 MJF18204 ON2025 |
SWITCHMODE™ NPN Bipolar Power Transistor for Electronic Light Ballast and Switching Power Supply Applications
From old datasheet system
POWER TRANSISTORS 5 AMPERES 1200 VOLTS 35 and 75 WATTS
|
MOTOROLA[Motorola, Inc]
ONSEMI[ON Semiconductor]
MOTOROLA[Motorola Inc]
|
| BUL147-D |
SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications
Power 10A 400V NPN
|
ON Semiconductor
|
| GT50J325 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Fast Switching Applications
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
TOSHIBA[Toshiba Semiconductor]
|
