| PART |
Description |
Maker |
| ADG918BRMZ ADG919BCPZ-REEL7 ADG91808 EVAL-ADG918EB |
Wideband, 43 dB Isolation @ 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT Switches 0 MHz - 4000 MHz RF/MICROWAVE DIVERSITY SWITCH, 1.25 dB INSERTION LOSS
Wideband 4 GHz, 43 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT
|
Analog Devices, Inc.
|
| ADG936 ADG936-R |
Wideband 4 GHz 36 dB Isolation at 1 GHz CMOS 1.65V to 2.75V Dual SPDT
|
Analog Devices
|
| NJM12904 NJM12904D NJM12904E NJM12904L NJM12904M N |
Radar Pulsed Power Amplifier.190 Watts 2.7.3.1 GHz / 200s Pulse / 10 Duty
Radar Pulsed Power Amplifier-190 Watts 2.7-3.1GHz,200ms Pulse,10% Duty
Radar Pulsed Power Amplifier.190 Watts 2.7.3.1 GHz, 200s Pulse, 10 Duty
Radar Pulsed Power Amplifier.190 Watts 2.7.3.1 GHz, 200レs Pulse, 10 Duty 雷达脉冲功率Amplifier.190.7.3.1千兆赫，200レ拧脉冲10职务
|
MA-Com
MACOM[Tyco Electronics]
Analog Devices, Inc.
|
| PTB20125 |
100 Watts, 1.8.0 GHz PCN/PCS Power Transistor
100 Watts, 1.8-2.0 GHz PCN/PCS Power Transistor 100瓦，1.8-2.0 GHz的PCN / PCS的功率晶体管
|
Ericsson Microelectronics
ERICSSON[Ericsson]
|
| PTF10137 |
12 Watts, 1.0 GHz GOLDMOS Field Effect Transistor 12瓦，1.0 GHz的GOLDMOS场效应晶体管
12 Watts 1.0 GHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson]
Ericsson Microelectronics
|
| TGA4832 |
DC - 35 GHz Wideband Amplifier
|
TRIQUINT[TriQuint Semiconductor]
|
| BFT92W-15 |
PNP 4 GHz wideband transistor
|
NXP Semiconductors
|
| BFG403W-15 |
NPN 17 GHz wideband transistor
|
NXP Semiconductors
|
| BFG94-2015 BFG94-15 |
NPN 6 GHz wideband transistor
|
Quanzhou Jinmei Electro...
|
| BFR94A |
NPN 3.5 GHz wideband transistor
|
Philips Semiconductors
|
| BFG93A-15 BFG93A-2015 |
NPN 6 GHz wideband transistors
|
Quanzhou Jinmei Electro...
|
