| PART |
Description |
Maker |
| NTE103ANPN |
Germanium Complementary Transistors Medium Power Amplifier
|
NTE
|
| AA113 2-OA95 2-OA90 2-OA91R JAN1N3287X 1N3287R JAN |
65 V, GERMANIUM, SIGNAL DIODE
100 V, GERMANIUM, SIGNAL DIODE
30 V, GERMANIUM, SIGNAL DIODE
6 V, GERMANIUM, SIGNAL DIODE
20 V, GERMANIUM, SIGNAL DIODE
|
MICROSEMI CORP
MICROSEMI CORP-LAWRENCE
|
| MJF6668 ON2050 MJF6388 MJF6688 |
Complementary power darlington
From old datasheet system
COMPLEMENTARY SILICON POWER DARLINGTONS 10 AMPERES 100 VOLTS 40 WATTS
|
ONSEMI[ON Semiconductor]
Motorola, Inc
MOTOROLA INC
|
| BFP620F07 BFP620FH7764 BFP620F |
C BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR
NPN Silicon Germanium RF Transistor
NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG
Infineon Technologies A...
|
| 1N60 1N60P |
GERMANIUM DIODES
|
Daesan Electronics Corp.
|
| 1N3717 1N3718 1N3719 1N3720 |
Germanium Diodes
|
New Jersey Semi-Conductor Products, Inc.
|
| OA85 |
GERMANIUM DIODE
|
ETC
|
| OA95/05 |
Diode Germanium
|
ETC
|
| 1N3712-21 |
Germanium Diodes
|
New Jersey Semi-Conductor P...
|
| 2N200 |
P-N-P GERMANIUM TRANSISTOR
|
New Jersey Semi-Conductor Products, Inc.
|
