| PART |
Description |
Maker |
| TLN11707 TLN117F |
INFRARED LED GAAS INFRAED EMITTER 红外发光二极管公认审INFRAED发射
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
| S5G9803X01-D0B0 S5G9801X01 S5G9801X01-D0B0 S5G9803 |
5015 RR 37#16 SKT RECP INFRAED REMOCON接收
INFRAED REMOCON RECEIVER
|
Samsung Semiconductor Co., Ltd.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| MTE8080P |
5mm Metal Can IR Emitter
Infrared Emitter
|
MARKTECH[Marktech Corporate]
|
| 2SA542 |
Low frequency amplifier. Collector-base voltage: Vcbo = -30V. Collector-emitter voltage: Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 250mW.
|
USHA India LTD
|
| Q62703-Q1090 SFH483E7800 SFH483 |
GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter 1 ELEMENT, INFRARED LED, 880 nm
GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter 发动器，红外Lumineszenzdiode GaAlA红外发射
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| TD62504FB TD62503FB E005669 |
From old datasheet system
7CH SINGLE DRIVER :COMMON EMITTER
7CH SINGLE DRIVER : COMMON EMITTER 7通道单一驱动程序：共发射
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
Toshiba, Corp.
|
| TD62593 TD62593AFN TD62594AFN TD62597AFN TD62598AF |
8CH SINGLE DRIVER : COMMON EMITTER 8路单驱动：共发射
8ch SINGLE DRIVER:COMMON EMITTER
From old datasheet system
|
Toshiba, Corp.
TOSHIBA[Toshiba Semiconductor]
|
| TD62504FN TD62502FN TD62503FN E005668 |
From old datasheet system
7ch SINGLE DRIVER : COMMON EMITTER
7ch SINGLE DRIVER(COMMON EMITTER) 7通道单一驱动程序（共发射极）
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
Toshiba, Corp.
|
| STE07DE220 E07DE220 |
Hybrid emitter switched bipolar transistor ESBT 2200 V - 7 A - 0.07 Ohm power module
Hybrid emitter switched bipolar transistor ESBT 2200V - 7A - 0.07з power module
Hybrid emitter switched bipolar transistor ESBT 2200V - 7A - 0.07搂? power module
Hybrid emitter switched bipolar transistor ESBT 2200V - 7A - 0.07 power module
|
ST Microelectronics
STMicroelectronics
|
| MAX692 MAX692CPA MAX692EJA MAX692EPA MAX692MJA MAX |
Octal D-Type Edge Triggered Flip-Flops with 3-State Outputs 20-CFP -55 to 125 微处理器监控电路
IGBT Module; Transistor Polarity:N Channel; Collector Emitter Voltage, Vceo:1.2kV; Collector Emitter Saturation Voltage, Vce(sat):3.2V; Power Dissipation, Pd:1140W; Package/Case:Module; C-E Breakdown Voltage:1200V
From old datasheet system
POWER SUPPLY SUPERVISOR,CMOS,DIP,16PIN,PLASTIC
Microprocessor Supervisory Circuits
|
Maxim Integrated Produc...
Maxim Integrated Products, Inc.
MAXIM[Maxim Integrated Products]
Maixm
Maxim Integrated Products Inc
MAXIM - Dallas Semiconductor
|
