| PART |
Description |
Maker |
| TSAL4400 |
GaAs/GaAlAs IR Emitting Diode in 3 mm (T.1) Package 砷化红外发光二极管的GaAIAs呢？3毫米（T.1）包
GaAs/GaAlAs IR Emitting Diode in ?3 mm (T.1) Package
From old datasheet system
GaAs/GaAlAs IR Emitting Diode in ? 3 mm (T?1)Package
GaAs/GaAlAs IR Emitting Diode in 3 mm (T.1) Package
GaAs/GaAlAs IR Emitting Diode in 庐3 mm (T.1) Package
GaAs/GaAlAs IR Emitting Diode in ?3 mm (T.1) Package
|
Vishay Intertechnology, Inc.
VISAY[Vishay Siliconix]
Vishay Telefunken
|
| TSAL7400 |
GaAs/GaAlAs IR Emitting Diode in ?5 mm (T-13/4) Package
GaAs/GaAlAs IR Emitting Diode in 庐5 mm (T-13/4) Package
GaAs/GaAlAs IR Emitting Diode in 5 mm (T-13/4) Package
From old datasheet system
GaAs/GaAlAs IR Emitting Diode in ?5 mm (T-13/4) Package
|
Vishay Telefunken
VISAY[Vishay Siliconix]
|
| TSAL6100 |
GaAs/GaAlAs IR Emitting Diode in ?5 mm (T-13/4) Package
GaAs/GaAlAs IR Emitting Diode in 5 mm (T-13/4) Package
From old datasheet system
GaAs/GaAlAs IR Emitting Diode in ?5 mm (T-13/4) Package
|
Vishay Telefunken
VISAY[Vishay Siliconix]
|
| TSML1000 TSML1040 TSML1020 TSML1030 |
Extented Power IR Emitting Diode in SMD Package
High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs
|
VISAY[Vishay Siliconix]
|
| TSML3710 |
GaAs/GaAlAs Infrared Emitting Diode in SMT Package
|
VISAY[Vishay Siliconix]
|
| TSAL7600 TSAL760009 |
High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs
|
Vishay Siliconix
|
| TSAL5100 |
High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs
|
Vishay Siliconix
|
| TSML100011 |
High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs
|
Vishay Siliconix
|
| TSAL640008 TSAL6400 |
High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs
|
Vishay Siliconix
|
| TSAL7200 TSAL720008 |
High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs
|
Vishay Siliconix
|
| TSAL760008 TSAL7600 |
High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs
|
Vishay Siliconix
|
| OP233 OP232 OP231 |
GaAs HERMETIC INFRARED EMITTING DIODES
GaALAs Hermetic Infrared Emitting Diode(铝砷化镓密封红外发光二极工作温度范围-65 125
|
OPTEK Technologies
Optek Technology
|
