| PART |
Description |
Maker |
| TC58512FT |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
| TC58NYG0S3EBAI4 |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
Toshiba Semiconductor
|
| TC58FVB160A TC58FVB160AXB TC58FVB160AXB-10 TC58FVB |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
| TH58NVG1S3AFT TH58NVG1S3AFT05 |
Flash - NAND
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
| TC74AC164P TC74AC164F TC74AC164FN TC74AC164FT |
8 - BIT SHIFT REGISTER (S - IN, P - OUT)
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
|
Toshiba Semiconductor
|
| 2SK3022TENTATIVE |
2SK3022 (Tentative) - N-Channel Power F-MOS FET
Power F-MOS FETs
|
Matsshita / Panasonic
|
| TPCP840207 TPCP8402 |
TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)
|
Toshiba Semiconductor
|
| TC51WHM516AXGN70 TC51WHM516AXGN65 |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS, 2,097,152-WORD BY 16-BIT CMOS PSEUDO STATIC RAM
|
TOSHIBA[Toshiba Semiconductor]
|
| TH58NVG1S3AFT05 |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
Toshiba Semiconductor
|
| TPC8111 |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)
|
Toshiba Semiconductor
|
| TPCF830307 |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)
|
Toshiba Semiconductor
|
