| PART |
Description |
Maker |
| IRF9540 IRF9540RF1S9540SM |
19A 100V 0.200 Ohm P-Channel Power MOSFETs(100.75 k) 9A 100V0.200欧姆P沟道功率MOSFET00.75十一
19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs
|
Electronic Theatre Controls, Inc.
Fairchild Semiconductor
|
| FSPYC260D1 FSPYC260F FSPYC260F4 FN4850 FSPYC260R4 |
From old datasheet system
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐N沟道MOS场效应管) 抗辐射，抗SEGR N沟道功率MOSFET（抗辐射沟道马鞍山场效应管）
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 58 A, 200 V, 0.031 ohm, N-CHANNEL, Si, POWER, MOSFET
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| VN2010L BS107 |
N-Channel 200-V (D-S) MOSFETs
|
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| 2N8768 |
N-Channel Power MOSFETs 30 A,150 V/200 V
|
New Jersey Semi-Conductor Products, Inc.
|
| RFM12N10 RFM12N08 RFP12N08 |
12A, 80Vand 100V, 0.200 Ohm, N-Channel Power MOSFETs
|
New Jersey Semi-Conductor P...
New Jersey Semi-Conduct...
|
| IRFR9110 IRFU9110 FN4001 |
P Channel Power MOSFET
3.1A, 100V, 1.200 Ohm, P-Channel Power MOSFETs
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| FRM9240H FRM9240R FRM9240D FN3242 |
7A, -200V, 0.720 Ohm, Rad Hard, P-Channel Power MOSFETs 7 A, 200 V, 0.72 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA
From old datasheet system
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| FRS9230R FRS9230D FRS9230H |
4A, -200V, 1.32 Ohm, Rad Hard, P-Channel Power MOSFETs 4 A, 200 V, 1.32 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AA
4A/ -200V/ 1.32 Ohm/ Rad Hard/ P-Channel Power MOSFETs
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| FSJ9260R4 FSJ9260D FSJ9260D1 FSJ9260D3 FSJ9260R FS |
27A, -200V, 0.130 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 27 A, 200 V, 0.13 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA
27A/ -200V/ 0.130 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
From old datasheet system
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| IXFH4N100 IXFT4N100 IXFH4N100Q IXFT4N100Q |
N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源击穿电000V,导通电.0Ω的N沟道增强型HiPerFET功率MOSFET) 4 A, 1000 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 4A I(D) | TO-247AD
HiPerFET Power MOSFETs Q-Class
Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
|
