| PART |
Description |
Maker |
| KDV142EL |
SILICON EPITAXIAL PIN TYPE DIODE
|
KEC(Korea Electronics)
|
| KDV142E |
SILICON EPITAXIAL PIN TYPE DIODE
|
KEC(Korea Electronics)
|
| KDP600UL-15 |
SILICON EPITAXIAL PIN TYPE DIODE
|
KEC(Korea Electronics)
|
| KDV172S |
SILICON EPITAXIAL PIN TYPE DIODE
|
KEC(Korea Electronics)
|
| KDP629UL |
SILICON EPITAXIAL PIN TYPE DIODE
|
KEC(Korea Electronics)
|
| JDP2S01AFS |
TOSHIBA Diode Silicon Epitaxial PIN Type
|
TOSHIBA[Toshiba Semiconductor]
|
| 1SV237 |
Diode Silicon Epitaxial Pin Type VHF~UHF Band RF Attenuator Applications
|
TOSHIBA
|
| 1SV252 |
Diode Silicon Epitaxial Pin Type VHF~UHF Band RF Attenuator Applications
|
TOSHIBA
|
| JDP4P02U |
Diode Silicon Epitaxial Pin Type UHF~VHF Band RF Attenuator Applications
|
TOSHIBA[Toshiba Semiconductor]
|
| KDV175 |
SILICON EPITAXIAL PIN TYPE DIODE(VHF-UHF BAND RF ATTENUATOR , AGC FOR AM/FM TUNER)
|
KEC[KEC(Korea Electronics)]
|
| 2SA965 2SA965O 2SA965Y |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE. DRIVER STAGE AND POWER AMPLIFIER APPLICATIONS
TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 800MA I(C) | TO-92VAR
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
|
TOSHIBA[Toshiba Semiconductor]
|
| UPA835 UPA835TC UPA835TC-T1 |
NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE
|
NEC Corp.
NEC[NEC]
|
