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SGW13N60UFD - Discrete, High Performance IGBT with Diode Ultra-Fast IGBT

SGW13N60UFD_53043.PDF Datasheet


 Full text search : Discrete, High Performance IGBT with Diode Ultra-Fast IGBT
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SGS13N60UFD SGS13N60UFDTU Discrete, High Performance IGBT with Diode
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320 x 240 pixel format, LED or CFL Backlight
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KVM INTERCONNECT MODULE CABLE
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Atmel Corp.
ATMEL[ATMEL Corporation]
AS7C256 AS7C256-10 AS7C256-10JC AS7C256-10PC AS7C2 ECONOLINE: RSZ/P - 1kVDC & 2kVDC Isolation- UL94V-0 Package Material- No Heatsink Required- No Extern. Components Required- Toroidal Magnetics- ContinuousShort Circuit Protection ( /P-Suffix)
High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 35 ns, PDSO28
High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 10 ns, PDSO28
High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 25 ns, PDSO28
High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 12 ns, PDSO28
High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 12 ns, PDIP28
High Performance 32Kx8 CMOS SRAM 高性能32Kx8 CMOS SRAM
High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 10 ns, PDIP28
High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 25 ns, PDIP28
ETC[ETC]
ALSC[Alliance Semiconductor Corporation]
Alliance Semiconductor, Corp.
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   30V PNP MEDIUM POWER HIGH PERFORMANCE TRANSISTOR IN SOT23
Diodes Incorporated
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安捷伦HSML - C220高性能采用的ChipLED
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CONNECTOR ACCESSORY
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22V10 GAL22V10 GAL22V10C-5LJ GAL22V10C-7LJ GAL22V1 148
DCCE37S
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PCB; Leaded Process Compatible:No; PCB Type:4 Channel I/O Rack; Peak Reflow Compatible (260 C):No; Size:3.5 x 3.5 in; Thickness:2.32" RoHS Compliant: No EE PLD, 15 ns, PQCC28
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SGW13N60UFD preis SGW13N60UFD logic SGW13N60UFD module SGW13N60UFD Number SGW13N60UFD Fairchild
 

 

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