| PART |
Description |
Maker |
| S20VT80 |
3 Phase Bridge Diode(800V 20A)
|
SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
|
| GBJ2008-F GBJ2006-F |
20A GLASS PASSIVATED BRIDGE RECTIFIER
|
Diodes Inc.
|
| KBJ20 |
Glass Passivated Single-Phase Bridge Rectifier, 20A
|
Nell Semiconductor Co.,...
|
| SPA5551 SPA555N |
20A / 1000 - 1200V SiC SCHOTTKY SINGLE PHASE BRIDGE
|
Solid States Devices, Inc
SOLID STATE DEVICES INC
|
| SPA555M SPA555 SPA555N |
20A / 1000 - 1200V SiC SCHOTTKY SINGLE PHASE BRIDGE
|
SSDI[Solid States Devices, Inc]
|
| CM10MD24H |
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1.2KV V(BR)CES | 20A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 1.2KV五（巴西）国际消费电子展|甲一（c
|
ITT, Corp.
|
| 164-22 163-28 163-12 164-12 164-26 164-20 164-30 1 |
TRANSISTOR | BJT | NPN | 220V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 260V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 20A I(C) | STR-5/16
晶体管|晶体管|叩| 160V五（巴西）总裁|甲一c）| STR-5/16
晶体管|晶体管| npn型| 120伏特五（巴西）总裁|甲一c）| STR-5/16
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 40V的五（巴西）总裁|甲一（c）| STR-5/16
TRANSISTOR | BJT | NPN | 280V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管| npn型| 280伏特五（巴西）总裁|甲一（c）| STR-5/16
|
Ecliptek, Corp.
|
| DF005S DF005M DF10S DF01M DF01S DF02M DF02S DF04M |
1000V Bridge in a D-71 package
800V Bridge in a D-71 package
400V Bridge in a D-71 package
200V Bridge in a D-71 package
100V Bridge in a D-71 package
50V Bridge in a D-71 package
600V Bridge in a D-71 package
1A Single Phase D.I.L. Rectifier Bridge (1.0A, from 50 to 1000V)
|
IRF[International Rectifier]
|
| HGT1S20N35G3VL HGTP20N35G3VL HGT1S20N35G3VLS HGT1S |
20A/ 350V N-Channel/ Logic Level/ Voltage Clamping IGBTs
20A, 350V N-Channel, Logic Level, Voltage Clamping IGBTs
TRANSISTOR | IGBT | N-CHAN | 380V V(BR)CES | 20A I(C) | TO-263AB
XC9536-6PC44C - NOT RECOMMENDED for NEW DESIGN
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| 20TQ040S 20TQ035S 20TQ045S 20TQ040 20TQ035STRR 20T |
40V 20A Schottky Discrete Diode in a TO-220AC package
45V 20A Schottky Discrete Diode in a D2-Pak package
35V 20A Schottky Discrete Diode in a D2-Pak package
COG Technology, 128 x 64 pixel format
SCHOTTKY RECTIFIER
40V 20A Schottky Discrete Diode in a D2-Pak package
45V 20A Schottky Discrete Diode in a TO-220AC package
|
IRF[International Rectifier]
|
| FME-220A |
Schottky Barrier Diode - 90V/100V
100V, 20A Schottky barrier diode in TO220F package
100V/ 20A Schottky barrier diode in TO220F package
100V, 20A,Schottky Barrier Diode(100V,20A,肖特基势垒二极管) 20 A, SILICON, RECTIFIER DIODE, TO-220AB
|
SANKEN[Sanken electric]
Sanken Electric Co., Ltd.
|
| FDD8424H11 |
Dual N & P-Channel PowerTrench? MOSFET N-Channel: 40V, 20A, 24mΩ P-Channel: -40V, -20A, 54mΩ
|
Fairchild Semiconductor
|
