| PART |
Description |
Maker |
| M27C1024-10XF7 M27C1024-12XF7 M27C1024-15XF7 M27C1 |
1-Mbit (64Kb x16) UV EPROM, 100ns
1-Mbit (64Kb x16) UV EPROM, 120ns
1-Mbit (64Kb x16) UV EPROM, 150ns
1-Mbit (64Kb x16) UV EPROM, 200ns
1-Mbit (64Kb x16) UV EPROM, 35ns
1-Mbit (64Kb x16) UV EPROM, 45ns
1-Mbit (64Kb x16) UV EPROM, 55ns
1-Mbit (64Kb x16) UV EPROM, 70ns
1-Mbit (64Kb x16) UV EPROM, 80ns
1-Mbit (64Kb x16) UV EPROM, 90ns
1-Mbit (64Kb x16) OTP EPROM, 120ns
1-Mbit (64Kb x16) OTP EPROM, 70ns
1-Mbit (64Kb x16) OTP EPROM, 90ns
1-Mbit (64Kb x16) OTP EPROM, 55ns
1-Mbit (64Kb x16) OTP EPROM, 45ns
1-Mbit (64Kb x16) OTP EPROM, 35ns
1-Mbit (64Kb x16) OTP EPROM, 150ns
1-Mbit (64Kb x16) OTP EPROM, 100ns
|
SGS Thomson Microelectronics
|
| M59BW10225N1T M59BW102 M59BW102N |
1 MBIT (64KB X16, BURST) LOW VOLTAGE FLASH MEMORY
1 Mbit 64Kb x16, Burst Low Voltage Flash Memory
1 MBIT (64KB X16, BURST) LOW VOLTAGE FLASH MEMORY
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| M27V102 |
NND - 1 MBIT (64KB X16) LOW VOLTAGE UV EPROM AND OTP EPROM
|
SGS Thomson Microelectronics
|
| M29F100B M29F100T 5123 M29F100B-90M1R M29F100B-90M |
NND - 1 MBIT (128KB X 8 OR 64KB X 16, BOOT BLOCK) SINGLE SUPPLY FLASH MEMORY
1 Mbit 128Kb x8 or 64Kb x16, Boot Block Single Supply Flash Memory
From old datasheet system
1 Mbit (128Kb x8 or 64Kb x16, Boot Block)Single Supply Flash Memory
|
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M27W400 M27W400-100B6TR M27W400-100F6TR M27W400-10 |
4 Mbit (512Kb x8 or 256Kb x16), Low Voltage UV EPROM and OTP EPROM
512K X 8 UVPROM, 100 ns, CDIP40
4 Mbit 512Kb x8 or 256Kb x16 Low Voltage UV EPROM and OTP EPROM 4兆位512KB的x856Kb的x16低压紫外线可擦写可编程只读存储器和OTP存储
256 Kbit 32Kb x 8 Low Voltage UV EPROM and OTP EPROM
|
SGS Thomson Microelectronics
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M29F102BB 6387 |
1 Mbit 64Kb x16, Boot Block Single Supply Flash Memory
From old datasheet system
|
STMicroelectronics
|
| M58LW064 M58LW064BT M58LW064A150T6T M58LW064AZA M5 |
64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories 64兆位x16和x16/x32，块擦除低压闪存
|
意法半导
STMicroelectronics N.V.
|
| M58LW064 M58LW064A M58LW064A150NF1T M58LW064A150NF |
64 Mbit x16 and x16/x32 / Block Erase Low Voltage Flash Memories
64 Mbit (x16 and x16/x32, Block Erase) Low Voltage Flash Memories
64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories
|
ST Microelectronics
SGS Thomson Microelectronics
|
| M29W200 M29W200BB M29W200BT M29W200BB70N6T M29W200 |
2 Mbit 256Kb x8 or 128Kb x16 / Boot Block Low Voltage Single Supply Flash Memory
KPSE 19C 19#20 PIN RECP
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Low Voltage Single Supply Flash Memory 2兆位56Kb x828KB的x16插槽，引导块低压单电源闪
|
ST Microelectronics
意法半导
STMicroelectronics N.V.
|
| M29W400BB90N6T M29W400BB90M1T M29W400BB55N1T |
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory 4兆位512KB的x856Kb的x16插槽，引导块低压单电源闪
|
STMicroelectronics N.V.
|
| M28W320C-GBT M28W320CB100GB1T M28W320CB100GB6T M28 |
32 Mbit (2Mb x16, Boot Block) 3V Supply Flash Memory
32 Mbit 2Mb x16, Boot Block Low Voltage Flash Memory
32 Mbit 2Mb x16/ Boot Block Low Voltage Flash Memory
Quadruple ESD transient voltage suppressor - Cd max.: 50 pF; IRM max: 0.1A; Number of protected lines: 4 ; PPP max: 0 W; VBR typ.: 20 V; VRWM: 15 V
Quadruple ESD transient voltage suppressor - Cd max.: 200 pF; IRM max: 0.7A; Number of protected lines: 4 ; PPP max: 0 W; VBR typ.: 6.2 V; VRWM: 4 V
|
意法半导
STMicroelectronics
|
