| PART |
Description |
Maker |
| E28F160S5-100 E28F320S5-90 28F160S5 DA28F160S5-100 |
WORD-WIDE FLASHFILE MEMORY FAMILY
|
INTEL[Intel Corporation]
|
| E28F004S3-120 E28F004S3-150 PA28F008S3-150 TB28F00 |
BYTE-WIDE SMART 3 FlashFile MEMORY FAMILY 4/ 8/ AND 16 MBIT
BYTE-WIDE SMART 3 FlashFile MEMORY FAMILY 4 / 8 / AND 16 MBIT
BYTE-WIDE SMART 3 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT 1M X 8 FLASH 2.7V PROM, 150 ns, PDSO44
BYTE-WIDE SMART 3 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT 512K X 8 FLASH 2.7V PROM, 120 ns, PDSO40
BYTE-WIDE SMART 3 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT 512K X 8 FLASH 2.7V PROM, 150 ns, PDSO44
|
Intel Corporation
Intel Corp.
Intel, Corp.
|
| 28F016S5 28F008S5 PA28F004S5-85 E28F008S5-85 PA28F |
BYTE-WIDE SMART 5 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT
BYTE-WIDE SMART 5 FlashFile MEMORY FAMILY 4/ 8/ AND 16 MBIT
|
Intel
|
| 28F160S3 |
3 V FlashFile Memory(3 V FlashFile 存储
|
Intel Corp.
|
| 28F008SA 29042908 |
5 Volt FlashFile Memory
From old datasheet system
|
Intel
|
| 28F008S3 28F004S3 28F016S3 29059805 |
3 Volt FlashFile Memory
From old datasheet system
|
Intel
|
| M6MGT331S8AKT M6MGB331S8AKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation
|
| M6MGT331S8BKT M6MGB331S8BKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation
|
| HM530281RTT-34 HM530281RTT-45 HM530281RTT-20 HM530 |
34ns; V(cc): -1.0 to 7.0V; 1W; ; 331,776-word x 8-bit flame memory
25ns; V(cc): -1.0 to 7.0V; 1W; ; 331,776-word x 8-bit flame memory
20ns; V(cc): -1.0 to 7.0V; 1W; ; 331,776-word x 8-bit flame memory
331,776-word x 8-bit Frame Memory
|
Hitachi Semiconductor
|
| MSM514223B |
262,263-Word x 4-Bit Field Memory
262263-Word x 4-Bit Field Memory
From old datasheet system
|
OKI electronic components
OKI[OKI electronic componets]
|
| M6MGB_T160S4BVP M6MGB M6MGB160S4BVP M6MGT160S4BVP |
16,777,216-BIT (1,048,576 -WORD BY 16-BIT / 2,097,152-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY
16,777,216-BIT CMOS 3.3V-ONLY FLASH MEMORY
CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| F28F008SA-120 E28F008SA-120 E28F008SA-85 F28F008SA |
8-MBIT (1-MBIT x 8) FlashFileTM MEMORY 8兆（1兆位× 8FlashFileTM记忆
8-MBIT (1-MBIT x 8) FlashFileTM MEMORY 1M X 8 FLASH 12V PROM, 120 ns, PDSO44
8-MBIT (1-MBIT x 8) FlashFileTM MEMORY 1M X 8 FLASH 12V PROM, 85 ns, PDSO44
8-MBIT (1-MBIT x 8) FlashFile MEMORY
|
Intel, Corp.
Intel Corp.
Intel Corporation
|
