| PART |
Description |
Maker |
| BU1924FS |
RDS / RBDS decoder
|
Rohm
|
| BU1923 BU1923F A5800836 |
RDS / RBDS decoder
From old datasheet system
|
Rohm CO.,LTD.
ROHM[Rohm]
|
| TDA7333 |
RDS/RBDS PROCESSOR
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| STK311-050 |
RDS/RBDS Demodulator Synchronization and Error Correction
|
Sanyo Semicon Device
|
| BUV94 BUV95 BDY46 |
RDS/RBDS processor
Metal Oxide Varistor (MOV); Voltage Rating AC, Vrms:660Vrms; Voltage Rating DC, Vdc:850VDC; Peak Surge Current (8/20uS), Itm:6500A; Clamping Voltage 8/20us Max :1650V; Peak Energy (10/1000uS):250J; Capacitance, Cd:400pF
|
|
| KDS8928A |
N-Channel 5.5 A, 30 V RDS(ON) = 0.030 RDS(ON) = 0.038 -4 A, -20 V RDS(ON) = 0.055
Dual N & P-Channel Enhancement Mode MOSFET
|
TY Semiconductor Co., L...
TY Semicondutor
|
| KDR8702H |
N-Ch RDS(ON) = 54m 3.6 A, 20 V RDS(ON) = 38m P-Ch RDS(ON) = 110 m
|
TY Semiconductor Co., Ltd
|
| S8119 |
MOSFET, Switching; VDSS (V): 60; ID (A): 1.5; Pch : 0.8; RDS (ON) typ. (ohm) @10V: -; RDS (ON) typ. (ohm) @4V[4.5V]: [0.173]; RDS (ON) typ. (ohm) @2.5V: 0.207; Ciss (pF) typ: 200; toff (µs) typ: 0.035; Package: MPAK 图片集成电路光开
|
Hamamatsu Photonics K.K.
|
| S4402 |
MOSFET, Switching; VDSS (V): 600; ID (A): 16; Pch : 35; RDS (ON) typ. (ohm) @10V: 0.475; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
|
Hamamatsu Photonics
|
| SSG4512CE SSG4512CE-15 |
N & P-Ch Enhancement Mode Power MOSFET N-Ch: 6.9 A, 30 V, RDS(ON) 31 m P-Ch: -5.2 A, -30 V, RDS(ON) 52 m
|
SeCoS Halbleitertechnologie GmbH
SeCoS Halbleitertechnol...
|
| S3921 S3921-512Q S3921-128Q |
NMOS linear image sensor Voltage output type with current-integration readout circuit and impedance conversion circuit
MOSFET, Switching; VDSS (V): 500; ID (A): 12; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.515; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1100; toff (µs) typ: 0.077; Package: TO-220FN
|
Hamamatsu Photonics
|
| IRFM250 |
N-Channel Power MOSFET(Vdss:200V,Id(cont):27.4A,Rds(on):0.100Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):27.4A,Rds(on):0.100Ω)) N沟道功率MOSFET（减振钢板基本：200伏，身份证（续）7.4A，的Rds（on）：0.100Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本00伏，身份证（续）7.4A时，RDS（对）：0.100Ω））
|
Electronic Theatre Controls, Inc.
SEME-LAB
Seme LAB
|
