| PART |
Description |
Maker |
| ATF-44101 |
2-8 GHz Medium Power Gallium Arsenide FET
|
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
|
| ML4963-138 ML4971-138 ML4941-111 ML4941-118 ML4941 |
40 GHz - 50 GHz, GALLIUM ARSENIDE, GUNN DIODE
50 GHz - 60 GHz, GALLIUM ARSENIDE, GUNN DIODE
27 GHz - 32 GHz, GALLIUM ARSENIDE, GUNN DIODE
|
|
| MG1041 MG1041-11 MG1042-11 MG1043-11 MG1044-11 MG1 |
23 GHz - 25 GHz, GALLIUM ARSENIDE, PULSED GUNN DIODE
GUNN Diodes Anode Heat Sink
|
MICROSEMI CORP-LOWELL
Microsemi Corporation
|
| CMM1530-LC CMM1530-LC-00S0 CMM1530-LC-00ST CMM1530 |
1850 MHz - 1910 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
1.85 to 1.91 GHz 3.0V, 30 dBm, PCS/PCN LCC-8 Power Amplifier 1.85.91 GHz.0V0 dBm的， PCN持有LCC - 8功率放大
|
MIMIX BROADBAND INC
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
N.A.
ETC[ETC]
CELERITEK
|
| MRFG35003MT1 |
MRFG35003MT1 3.5 GHz, 3 W, 12 V Power FET GaAs PHEMT
The RF GaAs Line GALLIUM ARSENIDE PHEMT RF POWER FIELD EFFECT TRANSISTOR
|
MOTOROLA[Motorola, Inc]
|
| NPT2021-DC-2P2GHZ-50W NPT2021-15 |
Gallium Nitride 48V, 50W, DC-2.2 GHz HEMT
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
|
| ATF-26884 ATF-26884-STR ATF-26884-TR1 ATF26884 |
2-16 GHz General Purpose Gallium Arsenide FET
|
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
|
| NPT2010 |
Gallium Nitride 48V, 100W, DC-2.2 GHz HEMT
|
M/A-COM Technology Solutions, Inc.
|
| NPT2019 |
Gallium Nitride 48V, 25W, DC-6 GHz HEMT
|
M/A-COM Technology Solutions, Inc.
|
| ATF-25170 |
0.5-10 GHz Low Noise Gallium Arsenide FET
|
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
|
