| PART |
Description |
Maker |
| IRFP32N50K IRFP32N50 IRFP32N50KPBF |
500V Single N-Channel HEXFET Power MOSFET in a TO-247AC package From old datasheet system HEXFET? Power MOSFET Power MOSFET(Vdss=500V, Rds(on)typ.=0.135ohm, Id=32A) 功率MOSFET(减振钢板基本\u003d 500V及的Rdson)典\u003d 0.135ohm,身份证\u003d 32A条)
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IRF[International Rectifier] International Rectifier, Corp.
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| APT5030AVR |
POWER MOS V 500V 14.7A 0.300 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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ADPOW[Advanced Power Technology]
|
| APT5017BVFR |
POWER MOS V 500V 30A 0.170 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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ADPOW[Advanced Power Technology]
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| APT5028SVR |
POWER MOS V 500V 20A 0.280 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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ADPOW[Advanced Power Technology]
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| APT5024SVR |
POWER MOS V 500V 22A 0.240 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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ADPOW[Advanced Power Technology]
|
| APT5022AVR |
POWER MOS V 500V 21A 0.220 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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ADPOW[Advanced Power Technology]
|
| APT5010LVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET POWER MOS V 500V 47A 0.100 Ohm
|
Advanced Power Technology Ltd. Advanced Power Technology, Ltd. ADPOW[Advanced Power Technology]
|
| APT5025BN APT5030BN |
POWER MOS IV 500V 23.0A 0.25 Ohm / 500V 21.0A 0.30 Ohm N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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ADPOW[Advanced Power Technology]
|
| APT5017BLC APT5017SLC APT10086BLC APT10086SLC |
POWER MOS VI 500V 30A 0.170 Ohm Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
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ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
|
| 2SK2715 A5800298 |
Transistors > MOS FET > Power MOS FET From old datasheet system Switching (500V, 2A) Switching (500V/ 2A)
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ROHM[Rohm]
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