| PART |
Description |
Maker |
| 1214-300M |
L-Band 1200-1400 MHz, Class C, Common Base-Pulsed; P(out) (W): 300; P(in) (W): 40; Gain (dB): 8.75; Vcc (V): 40; Pulse Width (µsec): 150; Duty Cycle (%): 10; Case Style: 55ST-1 L BAND, Si, NPN, RF POWER TRANSISTOR
300 Watts - 40 Volts, 150ms, 10% Radar 1200 - 1400 MHz
|
Microsemi, Corp.
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| R6200230 R6202250 R6201050 R6201850 R6201040 R6200 |
500 A, 400 V, SILICON, RECTIFIER DIODE
General Purpose Rectifier (300-500 Amperes Average 2400 Volts) 通用整流器（300-500安培平均2400伏特
300 A, 2200 V, SILICON, RECTIFIER DIODE HERMETIC SEALED PACKAGE-2
300 A, 1200 V, SILICON, RECTIFIER DIODE
300 A, 200 V, SILICON, RECTIFIER DIODE
|
Powerex Power Semicondu...
POWEREX INC
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
Powerex Power Semiconductor...
|
| R6221630 R6220830 R6221230 R6221030 R6220430 R6220 |
Fast Recovery Rectifier (300 Amperes Average 1600 Volts)
300 A, 1200 V, SILICON, RECTIFIER DIODE
|
Powerex Power Semicondu...
POWEREX[Powerex Power Semiconductors]
Powerex, Inc.
|
| PM300DVA120 |
Intellimod⑩ Module Single Phase IGBT Inverter Output (300 Amperes/1200 Volts)
Intellimod Module Single Phase IGBT Inverter Output (300 Amperes/1200 Volts)
|
POWEREX[Powerex Power Semiconductors]
|
| ADP5024 |
Dual 3 MHz, 1200 mA Buck Regulators with One 300 mA LDO
|
Analog Devices
|
| PP300T120-ND |
3-Phase POW-R-PAK IGBT Assembly 300 Amperes/1200 Volts
|
Powerex Power Semiconductors
|
| R6101020 R6101030 R6110420 R6100420 R6100425 R6100 |
General Purpose Rectifier (200-300 Amperes Average 1200 Volts) 通用整流器（200-300安培平均1200伏特
|
Powerex Power Semicondu...
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
http://
Powerex Power Semiconductor...
|
| MG300Q2YS60A |
Dual IGBTMOD
300 A, 1200 V, N-CHANNEL IGBT
|
Powerex Power Semicondu...
POWEREX INC
|
| UPD23C32380GZ-MJH UPD23C32340GZ-MJH UPD23C32340F9- |
32M-BIT MASK-PROGRAMMABLE ROM 4M-WORD BY 8-BIT (BYTE MODE) / 2M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE 32兆位掩膜可编程ROM的分位（字节模式 200万字6位（字模式）页面访问模式
CAP 3PF 16V /-0.1PF THIN-FILM SN90/PB10/NI 30PPM TR-7-PA
|
http://
NEC, Corp.
NEC Corp.
|
| UPD23C128040BL UPD23C128040BLGX UPD23C128040BLGX-X |
128M-BIT MASK-PROGRAMMABLE ROM 16M-WORD BY 8-BIT (BYTE MODE) / 8M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE
|
NEC
|
| ARF466FL ARF466FL10 |
RF MOSFET for 100-300 Volt Operation; P(out) (W): 300; fO (MHz): 45; VDD (V): 200; BVDSS (V): 1000; RqJC (ºC/Watt): 0.27; Case Style: T2; COO: A-E VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
RF POWER MOSFETs N-CHANNEL ENHANCEMENT MODE
|
Microsemi, Corp.
Microsemi Corporation
|
| LSIC1MO120E0080 |
LSIC1MO120E0080 1200 V N-channel, Enhancement-mode SiC MOSFET
|
Littelfuse
|
