| PART |
Description |
Maker |
| PD42S17405L |
16M- bit CMOS dynamic RAMs(16M CMOS 动态RAM) 1,600位CMOS动态存储器,600的CMOS动态内存）
|
NEC, Corp.
|
| MX25L1605ZM MX25L1605ZMC-20 MX25L1605ZMC-20G MX25L |
16M-BIT [x 1] CMOS SERIAL eLiteFlashTM MEMORY 16M X 1 FLASH 2.7V PROM, DSO8
|
Macronix International Co., Ltd.
|
| UPD4416004 UPD4416004G5-A17-9JF UPD4416004G5-A15-9 |
16M-BIT CMOS FAST SRAM 4M-WORD BY 4-BIT
|
NEC Corp.
NEC[NEC]
|
| UPD4616112F9-BC80-BC2 UPD4616112F9-BC90-BC2 |
16M-BIT CMOS MOBILE SPECIFIED RAM 1M-WORD BY 16-BIT 1,600位CMOS移动指明内存100万字6
1M X 16 APPLICATION SPECIFIC SRAM, 90 ns, PBGA48 6 X 8 MM, FBGA-48
|
NEC, Corp.
Infineon Technologies AG
NEC Corp.
|
| UPD4218160G5-60-7JF |
CMOS 16M-Bit DRAM
|
ETC
|
| TH58V128DC |
128 Mbit (16M x 8bit) CMOS NAND E2PROM (16M BYTE SmartMedia)
|
Toshiba Semiconductor
|
| MBM29F016A-90 MBM29F016A-90PFTR MBM29F016A MBM29F0 |
FLASH MEMORY CMOS 16M (2M x 8) BIT
|
SPANSION[SPANSION]
|
| MX25L1608EM2I12G |
16M-BIT [x 1 / x 2] CMOS SERIAL FLASH
|
Macronix International
|
| GM71V65403A GM71VS65403AL |
(GM71VS65403AL / GM71V65403A) 16M x 4-Bit CMOS DRAM
|
Hynix Semiconductor
|
| MX29LV017A MX29LV017AXBI-70 MX29LV017AXBI-90 MX29L |
16M-BIT [2Mx8] CMOS SINGLE VOLTAGE
|
http://
List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
|
| MX29F1610A_B 29F1610A |
16M-BIT [2M x8/1M x16] CMOS
From old datasheet system
|
Macronix 旺宏
|
