| PART |
Description |
Maker |
| IRLML6302TRPBF IRLML6302PBF07 |
HEXFET? Power MOSFET
technology, Ultra Low On-Resistance, P-Channel MOSFET
generation v technology
|
International Rectifier
|
| IRL3103D1PBF |
Generation 5 Technology
|
International Rectifier
|
| SH10DC40 |
Latest generation MOSFET technology
|
Teledyne Technologies I...
|
| IRF7304PBF IRF7304TRPBF |
Generation V Technology
HEXFET Power MOSFET
|
International Rectifier
|
| KRF7401 |
Generation V Technology Ultra Low On-Resistance N-Channel Mosfet
|
TY Semiconductor Co., Ltd
|
| IRLML5103PBF11 IRLML5103TRPBF |
Lead-Free, Fast Switching, Available in Tape and Reel
generation v technology
|
International Rectifier
|
| SGP02N12007 SGP02N120 SGD02N120 SGI02N120 |
Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGB06N60 SGB06N6006 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGW15N60 SGP15N60 SGP15N6008 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| IRF7304TR |
Generation V Technology
-20V Dual P-Channel HEXFET Power MOSFET in a SO-8 package
|
International Rectifier
|
| IRF7389 IRF7389TR |
Generation v technology
30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
|
IRF[International Rectifier]
|
| IRF7306 IRF7306TR IRF7306TRPBF |
Generation V Technology
-30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package
|
International Rectifier
|
