| PART |
Description |
Maker |
| LP62S16256FU-70LLI LP62S16256FU-55LLI |
70ns; operating current:40mA; standby current:10uA; 256K x 16bit low voltage CMOS SRAM
55ns; operating current:40mA; standby current:10uA; 256K x 16bit low voltage CMOS SRAM
|
AMIC Technology
|
| A615308S-10 A615308V-10 |
10ns; operating current:150mA; standby current: 12mA 32K x 8bit high speed CMOS SRAM
|
AMIC Technology
|
| HY62LF16804A-I HY62LF16804A-C HY62LF16804A HY62LF1 |
512K X 16 STANDARD SRAM, 85 ns, PBGA48
High speed, super low power and 8M bit full CMOS SRAM organized as 524,288 words by 16bits
512Kx16bit full CMOS SRAM
|
HYNIX SEMICONDUCTOR INC
Nel Frequency Controls,inc
|
| V62C1801024LL-85B V62C1801024LL-85T V62C1801024LL- |
LCD Displays 15.0 inch (38.0 cm) LVDS
Ultra Low Power 128K x 8 CMOS SRAM 128K的超低功耗8 CMOS SRAM
|
Mosel Vitelic Corp
Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
Mosel Vitelic, Corp.
|
| V62C2162048L V62C2162048L-100B V62C2162048L-100T V |
PC123X5YUP0F 128K的超低功耗16 CMOS SRAM
Ultra Low Power 128K x 16 CMOS SRAM
|
Mosel Vitelic, Corp.
MOSEL[Mosel Vitelic Corp]
Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
|
| TEA1703TS |
GreenChip SMPS standby control IC
Secondary side controller enabling very low standby power
|
NXP Semiconductors
|
| HY62WT08081E HY62WT08081E-DGC HY62WT08081E-DGE HY6 |
HY62WT08081E Series 32Kx8bit CMOS SRAM HY62WT08081E系列32Kx8bit CMOS SRAM
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
| AS7C164 AS7C164-20 AS7C164-20JC AS7C164-12 AS7C164 |
8K X 8 STANDARD SRAM, 12 ns, PDSO28
SRAM - 5V Fast Asynchronous
5V 8K X 8 CMOS SRAM
|
ALSC[Alliance Semiconductor Corporation]
|
| PLC18V8Z PLC18V8Z25A PLC18V8Z25D PLC18V8Z25DB PLC1 |
Zero standby power CMOS versatile PAL devices
|
PHILIPS[Philips Semiconductors]
|
| BS62LV8001 BS62LV8001EI BS62LV8001EIP55 BS62LV8001 |
Very Low Power/Voltage CMOS SRAM 1M X 8 bit
Very Low Power/Voltage CMOS SRAM 1M X 8 bit 1M X 8 STANDARD SRAM, 70 ns, PBGA48
Very Low Power/Voltage CMOS SRAM 1M X 8 bit 1M X 8 STANDARD SRAM, 55 ns, PBGA48
Aluminum Electrolytic Capacitor; Capacitor Type:High Temperature; Voltage Rating:25VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operating Temperature Range:-40 C to C; Capacitance:47uF RoHS Compliant: Yes
From old datasheet system
Asynchronous 8M(1Mx8) bits Static RAM
|
Brilliance Semiconducto...
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
|
| AS7C31024 AS7C31024-10 AS7C31024-10TJC AS7C31024-1 |
AML41 Series, Solid State Indicator, Square, Pushbutton Style, Lighted, 2 Incandescent Lamp, Snap in panel mount
AML41 Series, Solid State Indicator, Rectangular, Pushbutton Style, Lighted, 1 Incandescent Lamp, Snap in panel mount
5V/3.3V 128K x 8 CMOS SRAM (Evolutionary Pinout) 5V/3.3V 128K的8 CMOS SRAM的（进化引脚
SWTCH PLUNGR SPDT 15A SCREW TERM 128K X 8 STANDARD SRAM, 20 ns, PDSO32
5V/3.3V 128K x 8 CMOS SRAM (Evolutionary Pinout) 128K X 8 STANDARD SRAM, 20 ns, PDSO32
High Speed CMOS Logic Dual Negative-Edge-Triggered J-K Flip-Flops with Set and Reset 16-TSSOP -55 to 125 128K X 8 STANDARD SRAM, 20 ns, PDSO32
5V/3.3V 128K x 8 CMOS SRAM (Evolutionary Pinout) 128K X 8 STANDARD SRAM, 15 ns, PDSO32
BZ Series Standard Basic Switch, Single Pole Double Throw Circuitry, 15 A at 250 Vac, Pin Plunger Actuator, 2,5 N - 3,61 N [9 oz -13 oz] Operating Force, Silver Contacts, Solder Termination, CE, CSA, DEMKO, UL 128K X 8 STANDARD SRAM, 20 ns, PDSO32
AML41 Series, Solid State Indicator, Rectangular, Pushbutton Style, Lighted, 2 Incandescent Lamp, Snap in panel mount
5V/3.3V 128K8 CMOS SRAM (Evolutionary Pinout)
|
Alliance Semiconductor, Corp.
Alliance Semiconductor Corporation
ETC
|
| K6R4008V1B K6R4008V1B-C10 K6R4008V1B-C12 K6R4008V1 |
From old datasheet system
CMOS SRAM CMOS SRAM
|
Samsung Electronic
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
