| PART |
Description |
Maker |
| M64884FP M64884E |
From old datasheet system
Transistor for VCO,1st IF MIX,2-multiple circuit built-in 500MHz/1GHz Dual PLL Synthesizer
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| D2221UK |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(7.5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应7.5W-12.5V-1GHz,单端)
|
SemeLAB
SEME-LAB[Seme LAB]
|
| D1207 D1207UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(20W-12.5V-1GHz,Push-Pull)(镀金多用DMOS射频硅场效应20W-12.5V-1GHz,推挽)
METAL GATE RF SILICON FET
|
TT electronics Semelab Limited
Seme LAB
|
| D2002UK |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-28V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应5W-28V-1GHz,单端)
|
SemeLAB
Seme LAB
|
| D2021UK D2021 |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(7.5W-28V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应7.5W-28V-1GHz,单端)
METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
| D2005UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(7.5W-28V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应7.5W-28V-1GHz,单端)
METAL GATE RF SILICON FET
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| D2020UK D1211 D1211UK D2019 D2019UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-28V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应5W-28V-1GHz,单端)
METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
| D10040240GT |
40 MHz - 1000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
GaAs Power Doubler, 40 - 1000MHz, 24.0dB min. Gain @ 1GHz, 375mA max. @ 24VDC
|
RF MICRO DEVICES INC
PREMIER DEVICES, INC.
|
| CXA3627ER |
All Band Tuner IC with On-chip PLL
|
Sony Corporation
|
| MB15C100 MB15C100PFV MB15C100PV1 |
IF Band PLL Frequency Synthesizer
|
Fujitsu Microelectronics
FUJITSU[Fujitsu Media Devices Limited]
|
| CXA3252N |
All Band TV Tuner IC with On-chip PLL
All Band TV Tuner IC with On-chip PLL
|
SONY[Sony Corporation]
|
