| PART |
Description |
Maker |
| RFP3055 RFD3055 RFD3055SM |
12A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs (MegaFETs)
|
HARRIS[Harris Corporation]
|
| IRFF210 |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFETTRANSISTORS THRU-HOLE (TO-205AF)
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET剖TRANSISTORS THRU-HOLE (TO-205AF)
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET?TRANSISTORS THRU-HOLE (TO-205AF)
|
International Rectifier
Intersil Corporation
|
| IRFV360 |
400V Single N-Channel Hi-Rel MOSFET in a TO-258AA package
REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR
|
IRF[International Rectifier]
|
| URFP064G-T47-T URFP064L-T47-T RURFP064 |
70A, 60V N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| RF1K49157 |
6.3A, 30V, Avalanche Rated, Single N-Channel LittleFET Enhancement Mode Power MOSFET
6.3A, 30V, AVALANCHE RATED, SINGLE N-CHANNEL LITTLEFET⒙ ENHANCEMENT MODE POWER MOSFET
6.3A, 30V, Avalanche Rated, Single N-Channel LittleFETEnhancement Mode Power MOSFET
|
Fairchild Semiconductor Corporation
|
| BUZ103S Q67040-S4009-A2 |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175C operating temperature)
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175°C operating temperature)
SIPMOS ? Power Transistor
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175∑C operating temperature)
|
Infineon
Siemens Semiconductor Group
SIEMENS AG
|
| BUZ104SL Q67040-S4006-A2 |
SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated 175°C operating temperature)
SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated 175C operating temperature)
SIPMOS ? Power Transistor
SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated 175∑C operating temperature)
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| SPD18P06P08 SPD18P06PG |
SIPMOSò Power-Transistor Features Enhancement mode Avalanche rated
SIPMOS? Power-Transistor Features Enhancement mode Avalanche rated
|
Infineon Technologies AG
|
| ATP30212 ATP302-TL-H ATP302 |
P-Channel Power MOSFET, -60V, -70A, 13mOhm, ATPAK
General-Purpose Switching Device Applications
|
ON Semiconductor
Sanyo Semicon Device
|
| RF1K49088 |
3.5A, 30V, Avalanche Rated, Logic Level, Dual N-Channel LittleFET Enhancement Mode Power MOSFET
3.5A, 30V, Avalanche Rated, Logic Level, Dual N-Channel LittleFET⑩ Enhancement Mode Power MOSFET
3.5A 30V Avalanche Rated Logic Level Dual N-Channel LittleFET Enhancement Mode Power MOSFET
3.5A, 30V, Avalanche Rated, Logic Level, Dual N-Channel LittleFETEnhancement Mode Power MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
