| PART |
Description |
Maker |
| M29W640DB M29W640DB70N1E M29W640DB70N1F M29W640DB7 |
64 Mbit 8Mb x8 or 4Mb x16 / Boot Block 3V Supply Flash Memory
|
ST Microelectronics
|
| M29W640FT60N6E M29W640FT60N6F M29W640FT60ZA6E M29W |
64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block) 3V Supply Flash Memory
|
Numonyx B.V
|
| M58LW128BZA M58LW128A M58LW128A150N1E M58LW128A150 |
128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories
|
STMICROELECTRONICS[STMicroelectronics]
|
| M29DW640D90ZA6T M29DW640D M29DW640D70N1 M29DW640D7 |
64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory
|
STMICROELECTRONICS[STMicroelectronics]
|
| M29W640FT70N6E M29W640FT70N6F M29W640FB70ZA6F M29W |
64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block) 3V Supply Flash Memory 64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block) 3V Supply Flash Memory
|
Numonyx B.V
|
| M29DW640D 9470 |
64 MBIT (8MB X8 OR 4MB X16, MULTIPLE BANK, PAGE, BOOT BLOCK) 3V SUPPLY FLASH MEMORY From old datasheet system
|
STMicroelectronics
|
| M36WT864TF 8967 M36WV8B85ZA6T M36WT864 M36WT864B10 |
From old datasheet system 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
|
STMICROELECTRONICS[STMicroelectronics]
|
| M27V320-150N6 M27V320 M27V320-100M1 M27V320-100M6 |
2.5-V/3.3-V 20-Bit Buffers/Drivers With 3-State Outputs 56-SSOP -40 to 85 32兆位4Mb的x8或检察官办公室的2Mb x16存储 2.5-V/3.3-V 20-Bit Buffers/Drivers With 3-State Outputs 56-TVSOP -40 to 85 32 Mbit 4Mb x8 or 2Mb x16 OTP EPROM 32 MBIT (4MB X8 OR 2MB X16) OTP EPROM
|
SGS Thomson Microelectronics STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|
| M28W640CB M28W640CT |
64 MBIT (4MB X16, BOOT BLOCK) 3V SUPPLY FLASH MEMORY
|
SGS Thomson Microelectronics
|
| M58LW128H115ZA1 |
128 MBIT(8MB X16, UNIFORM BLOCK, BURST) 3V SUPPLY FLASH MEMORY
|
ST Microelectronics
|
| M59PW064-100M1 M59PW064-100N1 M59PW064-90M1 |
64 MBIT (4MB X16, UNIFORM BLOCK) 3V SUPPLY LIGHTFLASH MEMORY
|
ST Microelectronics
|