| PART |
Description |
Maker |
| IRFZ24L IRFZ24NS IRFZ24NSTRR IRFZ24NSTRL IRFZ24NL |
(159.21 k) 59.21十一
Power MOSFET(Vdss=55V, Rds(on)=0.07ohm, Id=17A) 功率MOSFET（减振钢板基本\u003d 55V的，的Rds（on）\u003d 0.07ohm，身份证\u003d 17A条）
55V,17A,N-Channel HEXFET Power MOSFET(55V,17A,N沟道 HEXFET功率MOS场效应管) 55V的，17A条，N沟道HEXFET功率MOSFET5V的，17A条，沟道的HEXFET功率马鞍山场效应管）
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRFIZ34N IRFIZ34NPBF |
55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Lsolated Base Power HEX-pak Assembly Half Bridge Configuration
Power MOSFET(Vdss=55V, Rds(on)=0.04ohm, Id=21A)
|
IRF[International Rectifier]
|
| IRFZ44Z IRFZ44ZL IRFZ44ZS |
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=55V, Rds(on)=13.9mohm, Id=51A)
|
IRF[International Rectifier]
|
| IRF5Y3205CM |
55V Single N-Channel Hi-Rel MOSFET in a TO-257AA package
THRU-HOLE (TO-257AA) 55V, N-CHANNEL
POWER MOSFET N-CHANNEL(Vdss=55V, Rds(on)=0.022ohm, Id=18A*)
|
IRF[International Rectifier]
|
| IRF1010N IRF1010NPBF |
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=55V/ Rds(on)=11mohm/ Id=85A)
Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A?
|
International Rectifier
|
| SPB08P06P SPP08P06P SPB08P06PSMD |
SIPMOS Power-Transistor
Low Voltage MOSFETs - Power MOSFET, -60V, D2PAK, RDSon = 0.30
Low Voltage MOSFETs - Power MOSFET, -60V, TO-220, RDSon = 0.30
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| IRF5M3205 |
POWER MOSFET N-CHANNEL(Vdss=55V, Rds(on)=0.015ohm, Id=35A)
THRU-HOLE (TO-254AA) 55V, N-CHANNEL
|
IRF[International Rectifier]
|
| IRFR9024N IRFU9024N IRFRU9024N IRFR9024NTR IRFR902 |
-55V Single P-Channel HEXFET Power MOSFET in a I-Pak package
-55V Single P-Channel HEXFET Power MOSFET in a D-Pak package
Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-11A)
HEXFET? Power MOSFET
Power MOSFET(Vdss=-55V Rds(on)=0.175ohm Id=-11A)
P Channel Surface Mount HEXFET Power MOSFET(P沟道表贴型HEXFET功率MOS场效应管) P通道表面贴装HEXFET功率MOSFET的性（P沟道表贴型的HEXFET功率马鞍山场效应管）
|
http://
IRF[International Rectifier]
International Rectifier, Corp.
|
| IPD12N03L IPU12N03L |
DDM43W2S
OptiMOS Power MOSFET, 30V, TO251, RDSon = 10.4mOhm, 30A, LL
OptiMOS Power MOSFET, 30V, DPAK, RDSon = 10.4mOhm, 30A, LL
OptiMOS Buck converter series
|
INFINEON[Infineon Technologies AG]
http://
|
| STB185N55F3 STP185N55F3 |
120 A, 55 V, 0.0035 ohm, N-CHANNEL, Si, POWER, MOSFET
N-channel 55V - 3.2m楼? - 120A - D2PAK/TO-220 STripFET垄芒 Power MOSFET
N-channel 55V - 3.2mΩ - 120A - D2PAK/TO-220 STripFET?/a> Power MOSFET
N-channel 55V - 3.2mΩ - 120A - D2PAK/TO-220 STripFET Power MOSFET
N-channel 55V - 3.2mヘ - 120A - D2PAK/TO-220 STripFET⑩ Power MOSFET
|
STMicroelectronics
|
| SPI80N03S2L-05 SPP80N03S2L-05 SPB80N03S2L-05 |
80 A, 30 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
OptiMOS Power-Transistor 的OptiMOS功率晶体
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 4.9mOhm, 80A, LL
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 5.2mOhm, 80A, LL
|
INFINEON[Infineon Technologies AG]
|
| SPP80N03S2-03 SPB80N03S2-03 SPI80N03S2-03 |
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 3.1 mOhm, 80A, NL
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 3.4 mOhm, 80A, NL
OptiMOS Power-Transistor 的OptiMOS功率晶体
80 A, 30 V, 0.0034 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB PLASTIC, TO-220, 3 PIN
|
INFINEON[Infineon Technologies AG]
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