| PART |
Description |
Maker |
| HUF75307D3 HUF75307D3S HUF75307P3 HUF75307D3ST HUF |
TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 15A I(D) | TO-252AA 晶体管| MOSFET的| N沟道| 55V的五（巴西）直| 15A条（丁）|52AA
15A, 55V, 0.090 Ohm N-Channel UltraFET Power MOSFETs
15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs 15 A, 55 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
15A, 55V, 0.099 Ohm, N-Channel UltraFET Power MOSFETs 15 A, 55 V, 0.09 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
15A/ 55V/ 0.090 Ohm/ N-Channel UltraFET Power MOSFETs
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| IRF9Z34N IRF9Z34NPBF |
Power MOSFET(Vdss=-55V/ Rds(on)=0.10ohm/ Id=-19A)
Power MOSFET(Vdss=-55V, Rds(on)=0.10ohm, Id=-19A)
-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
|
International Rectifier
|
| IRF5N3205 |
55V Single N-Channel Hi-Rel MOSFET in a SMD-1 package
POWER MOSFET N-CHANNEL(Vdss=55V, Rds(on)=0.008ohm, Id=55A*)
SURFACE MOUNT (SMD-1) 55V, N-CHANNEL
POWER MOSFET N-CHANNEL(Vdss=55V/ Rds(on)=0.008ohm/ Id=55A*)
|
IRF[International Rectifier]
|
| SPD08P06P SPU08P06P |
Low Voltage MOSFETs - Power MOSFET, -60V, I-PAK, RDSon = 0.30
SIPMOS Power-Transistor
Low Voltage MOSFETs - Power MOSFET, -60V, DPAK, RDSon = 0.30
|
INFINEON[Infineon Technologies AG]
|
| IRF5M4905 IRF5M4B905 |
Avalanche Energy Ratings
THRU-HOLE (TO-254AA) 55V, P-CHANNEL
POWER MOSFET P-CHANNEL(Vdss=-55V, Rds(on)=0.03ohm, Id=-35A*)
|
International Rectifier
|
| IRF5NJ5305 IRF5NJ5305SCX |
HEXFET POWER MOSFET SURFACE MOUNT (SMD-0.5)
22 A, 55 V, 0.065 ohm, P-CHANNEL, Si, POWER, MOSFET
POWER MOSFET P-CHANNEL(Vdss=-55V/ Rds(on)=0.065ohm/ Id=-22A*)
SURFACE MOUNT (SMD-0.5) 55V, P-CHANNEL
POWER MOSFET P-CHANNEL(Vdss=-55V, Rds(on)=0.065ohm, Id=-22A*)
-55V Single P-Channel Hi-Rel MOSFET in a SMD-0.5 package
|
IRF[International Rectifier]
|
| IRFU4105Z IRFR4105Z |
55V Single N-Channel HEXFET Power MOSFET in a I-Pak package
Power MOSFET(Vds=55V, Rds(on)=24.5mohm, Id=30A) 功率MOSFET（讥\u003d 55V的，的Rds（on）\u003d 24.5mohm，身份证\u003d 30A条）
Power MOSFET(Vds=55V / Rds(on)=24.5mohm / Id=30A)
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| STB185N55F3 STP185N55F3 |
120 A, 55 V, 0.0035 ohm, N-CHANNEL, Si, POWER, MOSFET
N-channel 55V - 3.2m楼? - 120A - D2PAK/TO-220 STripFET垄芒 Power MOSFET
N-channel 55V - 3.2mΩ - 120A - D2PAK/TO-220 STripFET?/a> Power MOSFET
N-channel 55V - 3.2mΩ - 120A - D2PAK/TO-220 STripFET Power MOSFET
N-channel 55V - 3.2mヘ - 120A - D2PAK/TO-220 STripFET⑩ Power MOSFET
|
STMicroelectronics
|
| V357.006449 V371 V384 V373 V321 V377 V315 V319 V30 |
BATTERIE KNOPFZELLE 1.55V D6.8 H2.15
BATTERIE KNOPFZELLE 1.55V D9.5 H3.6
BATTERIE KNOPFZELLE 1.55V D7.9 H5.4
BATTERIE KNOPFZELLE 1.55V D7.9 H2.1
BATTERIE KNOPFZELLE 1.55V D11.6 H4.2
BATTERIE KNOPFZELLE 1.55V D11.6 H2.1
BATTERY BUTTON CELL 1.5V 1.5V的电池扣式电
BATTERIE KNOPFZELLE 1.55V D11.6 H5.4 巴特里KNOPFZELLE 1.55V的D11.6 H5.4
BATTERY SILVER OXIDE BUTTON
|
TE Connectivity, Ltd.
Ecliptek, Corp.
|
| SPI80N03S2L-05 SPP80N03S2L-05 SPB80N03S2L-05 |
80 A, 30 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
OptiMOS Power-Transistor 的OptiMOS功率晶体
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 4.9mOhm, 80A, LL
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 5.2mOhm, 80A, LL
|
INFINEON[Infineon Technologies AG]
|
| SPB70N10L SPI70N10L SPP70N10L |
Low Voltage MOSFETs - Power MOSFET, 100V, TO-220, RDSon=16mOhm, 70A, LL
SIPMOS Power-Transistor
Low Voltage MOSFETs - Power MOSFET, 100V, TO-262, RDSon=16mOhm, 70A, LL
|
INFINEON[Infineon Technologies AG]
|
|
