| PART |
Description |
Maker |
| PN268S-NC PN268 PN268-NC PN268Q PN268Q-NC PN268R P |
PHOTOTRANSISTOR | DARLINGTON | 850NM PEAK WAVELENGTH | 30M | LED-2B DARLINGTON PHOTOTRANSISTOR FOR OPTICAL CONTROL SYSTEMS
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PANASONIC[Panasonic Semiconductor] Panasonic Corporation
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| H21A5 H21A4 H21A6 |
PHOTOTRANSISTOR OPTICAL INTERRUPTER SWITCH
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Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
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| H21A H21A3 H21A2 H21A1 |
PHOTOTRANSISTOR OPTICAL INTERRUPTER SWITCH
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Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
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| TCST123009 |
Transmissive Optical Sensor with Phototransistor Output
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Vishay Siliconix
|
| QVE00033_05 QVE00033 QVE0003305 |
Phototransistor Optical Surface Mount Interrupter Switch
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FAIRCHILD[Fairchild Semiconductor]
|
| KT870 KT880 |
(KT860 - KT890) Slotted Optical Switches Phototransistor Output
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Optek Technology
|
| KT872N15 KT872N55 KT872P51 KT872P55 KT872T55 KT872 |
Slotted optical switch phototransistor output. Opaque polysulpone discrete shells with .02 inches SQ, leads. Electrical parameter C lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .050 inches Slotted optical switch phototransistor output. Opaque polysulpone discrete shells with .02 inches SQ, leads. Electrical parameter C lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .050 inches Slotted optical switch phototransistor output. Opaque polysulpone discrete shells with .02 inches SQ, leads. Electrical parameter C lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches. Electrical parameter A lead spacing .320 inches. Aperture width in front of sensor .010 inches. Aperture width in front of emitter . Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter A lead spacing .320inches. Aperture in front of sensor .050inches. Aperture width in front of emitter Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .01 Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .05 Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter C lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .05 Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter B lead spacing .320inches. Aperture in front of sensor .050inches. Aperture in front of emitter .050i Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter A lead spacing .320inches. Aperture width in front of sensor .050inches. Aperture in front of emitter Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .0 Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .05 Slotted optical switch phototransistor output. Opaque polysulpone discrete shells with .02 inches SQ, leads. Electrical parameter A lead spacing .220 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .050 inches Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter A lead spacing .220 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .05 Slotted optical switch phototransistor output. Opaque polysulpone discrete shells with .02 inches SQ, leads. Electrical parameter B lead spacing .220 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .050 inches Slotted optical switch phototransistor output. Opaque polysulpone discrete shells with .02 inches SQ, leads. Electrical parameter B lead spacing .220 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches Slotted optical switch phototransistor output. Opaque polysulpone discrete shells with .02 inches SQ, leads. Electrical parameter B lead spacing .220 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .050 inches Slotted optical switch phototransistor output. Opaque polysulpone discrete shells with .02 inches SQ, leads. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches Slotted optical switch phototransistor output. Opaque polysulpone discrete shells with .02 inches SQ, leads. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .050 inches Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter C lead spacing .220 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .05 Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter C lead spacing .220 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .01 Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter C lead spacing .220 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .05
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Optek Technology
|
| PNZ0102 |
V(ceo): 30V; V(cbo): 40V; V(ebo); 5V; V(ebo): 5V; 50mA; 150mW; silicon NPN phototransistor. For optical control systems
|
Panasonic
|
| TCPT1300X01 |
Subminiature Transmissive Optical Sensor with Phototransistor Output, RoHS Compliant, Released for Lead (Pb)-free Solder Process, AEC-Q101 Released
|
Vishay Siliconix
|
| TCST525006 TCST5250 |
Transmissive Optical Sensor with Phototransistor Output
|
Vishay Siliconix
|
| 61055-004 61055-105 66155-101 61055 61055-001 6105 |
SILICON PHOTOTRANSISTOR “PILL PACK? Circular Connector; No. of Contacts:15; Series:PT06; Body Material:Aluminum; Connecting Termination:Solder; Connector Shell Size:14; Circular Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:14-15 PHOTO TRANSISTOR DETECTOR SILICON PHOTOTRANSISTOR PILL PACK PHOTO TRANSISTOR DETECTOR SILICON PHOTOTRANSISTOR B>PILL PACK SILICON PHOTOTRANSISTOR “PILL PACK” SILICON PHOTOTRANSISTOR PILL PACK |
Micropac Industries SILICON PHOTOTRANSISTOR PILL PACK
Micropac Industries 0.5-3mA 50V silicon phototransistor PILL PACK: type GS1020
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Micropac Industries, Inc. MICROPAC[Micropac Industries] Tyco Electronics 12 7 19 14 16 18
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