| PART |
Description |
Maker |
| ISOPAC01 ISOPAC0103 ISOPAC0104 ISOPAC0111 ISOPAC01 |
High Current High density Isolated Silicon Power Rectifier(????靛?600V锛?ぇ?垫?锛??瀵?害锛??绂诲?锛??????存???
High Current High density Isolated Silicon Power Rectifier(????靛?1000V锛?ぇ?垫?锛??瀵?害锛??绂诲?纭?????娴??)
High-Current Isolated Rectifier Assemblies. 150 V-1000 V. 10 nS - 2 microseconds 大电流隔离整流器大会150 V000五，10纳秒- 2微秒
HIGH CURRENT ISOLATED RECTIFIER ASSEMBLY
High Current High density Isolated Silicon Power Rectifier(????靛?1000V锛?ぇ?垫?锛??瀵?害锛??绂诲?锛??????存???
|
International Rectifier, Corp.
Semtech Corporation
|
| SD25-220 SD10-6R2 SD20-6R2 SD25-R82 SD25-331 SD25- |
High Power Density, Low Profile, Shielded Inductors 高功率密度，扁平，屏蔽电
|
Electronic Theatre Controls, Inc.
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| 200F 209S12FA |
LOW COST, HIGH POWER DENSITY 24 PIN DIP COMPATIBLE, 2.25W LAN DC/DC CONVERTERS
|
Make-Ps
|
| FX5545G305 |
Industry Smallest and Low Profile 10W 3.0A DC/DC Buck Converter with High Output Density Power
|
Vishay
|
| FX5545G1052V7T2 FX5545G105 FX5545G1052V7B1 FX5545G |
Industry Smallest and Low Profile 6.5W 2.0A DC/DC Buck Converter with High Output Power Density
From old datasheet system
|
VISAY[Vishay Siliconix]
|
| MVAC250-24AFD MVAC-COVER |
250W 3 x 5 High Density AC-DC Power Supply Converter
250 Watt Silicon Type Metal Package Power Transistor
250W 3 x 5 High Density AC-DC Power Supply Converter
|
Murata Power Solutions ...
|
| 5962-87567012A |
Low-Power, Low-Distortion, Central-Office ADSL Drivers and Integrated Drivers/Receivers 3线复用器
|
Bourns, Inc.
|
| CBRLDSH2-40 CBRLDSH2-40-15 |
SURFACE MOUNT HIGH DENSITY HIGH DENSITY SCHOTTKY BRIDGE RECTIFIER
|
Central Semiconductor C...
|
| ISPLSI2096VE-100LT128 ISPLSI2096VE-135LT128 ISPLSI |
3.3V In-System Programmable SuperFAST?/a> High Density PLD
CRYSTAL 24.0 MHZ 20PF SMD
3.3V In-System Programmable SuperFASTHigh Density PLD
3.3V In-System Programmable SuperFAST High Density PLD
3.3V In-System Programmable SuperFAST⑩ High Density PLD
3.3VIn-SystemProgrammableSuperFASTHighDensityPLD
|
Lattice Semiconductor Corporation
LATTICE[Lattice Semiconductor]
|
| QL2009 QL2009-0PB256C QL2009-0PB256I QL2009-0PF144 |
3.3V and 5.0V pASIC 2 FPGA combining speed, density, low cost and flexibility.
3.3V and 5.0V pASIC? 2 FPGA Combining Speed Density Low Cost and Flexibility
3.3V and 5.0V pASICò 2 FPGA
3.3V and 5.0V pASIC? 2 FPGA Combining Speed, Density, Low Cost and Flexibility
3.3V and 5.0V pASIC 2 FPGA Combining Speed/ Density/ Low Cost and Flexibility
3.3V and 5.0V pASIC 2 FPGA Combining Speed, Density, Low Cost and Flexibility(高速，高可用密度，低成本、可适应性强.3V.0V pASIC 2系列场可编程逻辑器件)
PT 6C 6#20 PIN RECP
PT 8C 8#20 PIN RECP
3.3V and 5.0V pASIC 2 FPGA Combining Speed, Density, Low Cost and Flexibility 3.3V.0V帕希奇？ 2 FPGA的结合速度，密度，低成本和灵活
|
List of Unclassifed Manufacturers
ETC[ETC]
Electronic Theatre Controls, Inc.
QuickLogic Corp.
|
| ULN2004L ULQ2004L 2003 ULN2023A ULN2023L ULN2024A |
HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAYS 高电压，大电流达林顿阵列
Low-density access line, ARM-based 32-bit MCU with 16 or 32 KB Flash, 5 timers, ADC and 4 communication interfaces 高电压，大电流达林顿阵列
Low-density performance line, ARM-based 32-bit MCU with 16 or 32 KB Flash, USB, CAN, 6 timers, 2 ADCs, 6 communication interfaces
Medium-density access line, ARM-based 32-bit MCU with 64 or 128 KB Flash, 6 timers, ADC and 7 communication interfaces
HIGH-VOLTAGE/HIGH-CURRENTDARLINGTONARRAYS
HIGH-VOLTAGE/ HIGH-CURRENT DARLINGTON ARRAYS
HIGH-VOLTAGE HIGH-CURRENT DARLINGTON ARRAYS
7-Channel High-Current Darlington Array
High-Voltage, High-Current Darlington Arrays(杈???靛?95V锛??浜???靛钩?昏??佃矾??????澶?????璐?浇?寸??ュ???????澶х?娴?揪??】?靛?)
HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAYS
|
NetPower Technologies, Inc.
Allegro MicroSystems, Inc.
AllegroMicroSystems
ALLEGRO[Allegro MicroSystems]
|
