| PART |
Description |
Maker |
| 2SA209706 |
High-Speed Swtching Applications DC-DC Converter Applications
|
Toshiba Semiconductor
|
| 2SC4727 |
20V/8A Switching Applications
|
SANYO[Sanyo Semicon Device]
|
| S2370 |
V(dsx): 60V; V(dgr): 60V; V(gss): -20V; 40A; 125W; field effect transistor. For high speed high current switching applications, chopper regular, DC-DC converter and motor drive applications
HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SB1140 2SB1140T |
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
20V/5A Switching Applications
|
SANYO[Sanyo Semicon Device]
|
| EN9010A EN9010 |
N-Channel Power MOSFET, 20V, 7.5A, 17mOhm, Dual ECH8
General-Purpose Switching Device Applications
|
ON Semiconductor
Sanyo Semicon Device
|
| EMH2604 |
Power MOSFET, 20V, 4A, 45mOhm, -20V, -3A, 85mOhm, Complementary Dual EMH8
|
ON Semiconductor
|
| 2SD1685 2SD1685G 2SD1685F |
Low-Power, Single/Dual-Level Battery Monitors with Hysteresis
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 5A I(C) | TO-126
High-Current Switching Applications
|
SANYO[Sanyo Semicon Device]
|
| STT358512 |
3.5A, 20V, RDS(ON) 75m -2.5A, -20V, RDS(ON) 160m N And P-Channel Enhancement Mode Power MOSFET
|
SeCoS Halbleitertechnologie GmbH
|
| 2SC3327 2SC3327B |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 300MA I(C) | SPAK
TRANSISTOR SILICON NPN EPITAXIAL TYPE FOR MUTING AND SWITCHING APPLICATIONS
|
TOSHIBA
|
| 2SJ144-GR |
Audio Frequency Amplifier Applications Analog Switch Applications Constant Current Applications Impedance Converter Applications
|
Toshiba Semiconductor
|
| ITF87072DK8T FN4812 |
6A, 20V, 0.037 Ohm, Dual P-Channel,2.5V Specified Power MOSFET(6A, 20V, 0.037Ω双组 P沟道2.5V专用功率MOS场效应管)
From old datasheet system
6A, 20V, 0.037 Ohm, Dual P-Channel, 2.5V Specified Power MOSFET
|
Intersil Corporation
|
