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  mos-1.9a Datasheet PDF File

For mos-1.9a Found Datasheets File :: 415    Search Time::4.563ms    
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    2SJ531

HITACHI[Hitachi Semiconductor]
Part No. 2SJ531
OCR Text MOS FET High Speed Power Switching ADE-208-646A (Z) 2nd. Edition Jun 1998 Features * Low on-resistance R DS(on) = 0.050 typ. * Low drive...1. Gate 2. Drain 3. Source 2SJ531 Absolute Maximum Ratings (Ta = 25C) Item Drain to source volt...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 49.99K  /  9 Page

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    2SJ534

HITACHI[Hitachi Semiconductor]
Part No. 2SJ534
OCR Text MOS FET High Speed Power Switching ADE-208-589C (Z) 4th. Edition Jun 1998 Features * Low on-resistance R DS(on) = 0.050 typ. * Low drive...1. Gate 2. Drain 3. Source 3 2SJ534 Absolute Maximum Ratings (Ta = 25C) Item Drain to source v...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 51.11K  /  9 Page

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    2SJ542

HITACHI[Hitachi Semiconductor]
Part No. 2SJ542
OCR Text MOS FET High Speed Power Switching ADE-208-591B (Z) 3rd. Edition Jun 1998 Features * Low on-resistance R DS(on) = 0.050 typ. * Low drive...1 2 S 3 1. Gate 2. Drain (Flange) 3. Source 2SJ542 Absolute Maximum Ratings (Ta = 25C) Item ...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 51.62K  /  9 Page

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    2SJ551 2SJ551L 2SJ551S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ551 2SJ551L 2SJ551S
OCR Text MOS FET High Speed Power Switching ADE-208-647B (Z) 3rd. Edition Jun 1998 Features * Low on-resistance R DS(on) = 0.050 typ. * Low drive...1 1 2 3 G 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SJ551(L),2SJ551(S) Abs...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 54.47K  /  9 Page

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    2SK1088 2SK1088-M

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FUJI[Fuji Electric]
Part No. 2SK1088 2SK1088-M
OCR Text ...d Transconductance N-channel MOS-FET 150V 0,3 9A 35W > Outline Drawing > Applications - Motor Control - General Purpose ...1,0 Typ. 1,5 10 0,2 10 0,26 0,20 10 900 150 40 10 40 150 30 1,1 100 Max. 2,5 500 1,0 100 0,40 ...
Description N-channel MOS-FET

File Size 181.89K  /  2 Page

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    HGT1S20N60B3S HGTG20N60B3 HGTP20N60B3 FN3723

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FAIRCHILD[Fairchild Semiconductor]
INTERSIL[Intersil Corporation]
Fairchild Semiconductor Corporation
Part No. HGT1S20N60B3S HGTG20N60B3 HGTP20N60B3 FN3723
OCR Text ... HGTG20N60B3 are Generation III MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. The...1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Pro...
Description 40A/ 600V/ UFS Series N-Channel IGBTs
40A, 600V, UFS Series N-Channel IGBTs
From old datasheet system
XC9536-6VQ44C - NOT RECOMMENDED for NEW DESIGN
40 A, 600 V, N-CHANNEL IGBT

File Size 137.79K  /  6 Page

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    HGT1S20N60C3S HGTG20N60C3 HGTP20N60C3 G20N60C3 HGT1S20N60C3S9A

FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
Part No. HGT1S20N60C3S HGTG20N60C3 HGTP20N60C3 G20N60C3 HGT1S20N60C3S9A
OCR Text MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input i...1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate to...
Description 45 A, 600 V, UFS N-Channel IGBT
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0654-6 53 45 A, 600 V, N-CHANNEL IGBT, TO-263AB
45A, 600V, UFS Series N-Channel IGBT 5A00V的,的ufs系列N沟道IGBT

File Size 141.01K  /  8 Page

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    HGT1S7N60A4DS HGTG7N60A4D HGTP7N60A4D

FAIRCHILD[Fairchild Semiconductor]
Part No. HGT1S7N60A4DS HGTG7N60A4D HGTP7N60A4D
OCR Text ...TP7N60A4D and HGT1S7N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. The...1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM...
Description 600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
600V SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
600 V, SMPS N-Channel IGBT with Anti-Parallel Hyperfast Diode

File Size 140.21K  /  9 Page

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    HGT1S7N60A4S HGTD7N60A4S HGTP7N60A4 HGTG7N60A4 FN4826

INTERSIL[Intersil Corporation]
Part No. HGT1S7N60A4S HGTD7N60A4S HGTP7N60A4 HGTG7N60A4 FN4826
OCR Text ..., HGTG7N60A4 and HGTP7N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. The...1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Pro...
Description From old datasheet system
600V SMPS Series N-Channel IGBT
600V, SMPS Series N-Channel IGBT
600V/ SMPS Series N-Channel IGBT

File Size 166.85K  /  11 Page

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    HGT1S7N60B3DS HGTP7N60B3D HGT1S7N60B3DS9A

FAIRCHILD[Fairchild Semiconductor]
Part No. HGT1S7N60B3DS HGTP7N60B3D HGT1S7N60B3DS9A
OCR Text ...TP7N60B3D and HGT1S7N60B3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. The...1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate to...
Description 14A/ 600V/ UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode
14 A, 600 V, UFS N-Channel IGBT with Anti-Parallel Hyperfast Diode
14A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 7A I(C) | TO-263AB

File Size 158.34K  /  8 Page

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