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FUJI[Fuji Electric]
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| Part No. |
2SK3271-01
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| OCR Text |
...[V]
VGS [V]
IF [A]
7
8
9
VDS [V]
Qg [nC]
VSD [V]
Maximum Avalanche Energy vs. starting Tch
EAV=f(starting Tch): VCC=24V; IAV 80A
Safe Operation Area
ID=f(VDS): D=0,01, Tc=25C
Zth(ch-c) [K/... |
| Description |
N-channel MOS-FET
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| File Size |
255.58K /
2 Page |
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fairchild
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| Part No. |
FDP3632
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| OCR Text |
... 80A, 9m
Features
* rDS(ON) = 7.5m (Typ.), VGS = 10V, ID = 80A * Qg(tot) = 84nC (Typ.), VGS = 10V * Low Miller Charge * Low QRR Body Diode * UIS Capability (Single Pulse and Repetitive Pulse) * Qualified to AEC Q101
Applications
* DC/... |
| Description |
ic
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| File Size |
238.06K /
11 Page |
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GE[General Semiconductor] N.A.
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| Part No. |
GFB75N03
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| OCR Text |
...Source Threshold Voltage (V)
1.7 ID = 250A 0.016 0.014
Fig. 4 - On-Resistance vs. Drain Current
RDS(ON) -- On-Resistance ()
1.5 1.3 1.1
0.012 0.01 VGS = 4.5V 0.008 0.006 0.004 0.002 0 VGS = 10V
0.9
0.7 0.5 --50
--25
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| Description |
N-channel Enhancement-mode MOSFET TRANSISTOR|MOSFET|N-CHANNEL|30VV(BR)DSS|75AI(D)|TO-263AB
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| File Size |
98.61K /
5 Page |
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Price and Availability
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