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| Part No. |
2SK3451-01MR
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| OCR Text |
...rrent i ar 12 a tch<=150 c l=3.00mh vcc=60v maximum drain-source dv/dt dv ds /dt kv/ s peak diode recovery dv/dt dv/dt kv/ s ta=25c 60 tc=25c operating and storage t ch 150 c temperature range t stg -55 to +150 c *1 i f -i d ,-di/dt=5... |
| Description |
STD MOSFET
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| File Size |
259.17K /
19 Page |
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it Online |
Download Datasheet
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ADPOW[Advanced Power Technology]
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| Part No. |
APT8030JVFR
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| OCR Text |
...3471 4 Starting T = +25C, L = 8.00mh, R = 25, Peak I = 25A j G L 5 I -I [Cont.], di/ = 100A/s, V S D DD VDSS, Tj 150C, RG = 2.0, dt
VR = 200V
APT Reserves the right to change, without notice, the specifications and information contai... |
| Description |
POWER MOS V 800V 25A 0.300 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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| File Size |
69.94K /
4 Page |
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it Online |
Download Datasheet |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT4015AVR
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| OCR Text |
...3471 4 Starting T = +25C, L = 4.00mh, R = 25, Peak I = 25.5A j G L
1 Repetitive Rating: Pulse width limited by maximum junction
temperature. 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2%
APT Reserves the right to change, witho... |
| Description |
POWER MOS V 400V 25.5A 0.150 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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| File Size |
63.92K /
4 Page |
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it Online |
Download Datasheet |
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