| |
|
 |
ONSEMI[ON Semiconductor]
|
| Part No. |
MAC08BT105 MAC08BT1G MAC08MT1G MAC08MT1 MAC08BT1
|
| OCR Text |
...on = 2.0 mS, VDRM = 200 V, Gate unenergized, TC = 110C, Gate Source Resistance = 150 W, See Figure 10) Critical Rate-of-Rise of Off State Voltage (Vpk = Rated VDRM, TC= 110C, Gate Open, Exponential Method) 2. Pulse Test: Pulse Width 300 ms... |
| Description |
Silicon Bidirectional Thyristor(0.8A锛?00V涓????????纭???哥?) Sensitive Gate Triacs Silicon Bidirectional Thyristors Silicon Bidirectional Thyristor(0.8A00V三端双向可控硅晶闸管) 200 V, 0.8 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-261AA
|
| File Size |
90.96K /
7 Page |
View
it Online |
Download Datasheet
|
| |
|
 |
ONSEMI[ON Semiconductor]
|
| Part No. |
MAC212A8D MAC212A8DG MAC212A10 MAC212A10G MAC212A8 MAC212A8G
|
| OCR Text |
...mutating di/dt = 6.1 A/ms, Gate unenergized, TC = +85C) Critical Rate of Rise of Off-State Voltage (VD = Rated VDRM, Exponential Voltage Rise, Gate Open, TC = +85C) dv/dt(c) - 5.0 - V/ms VTM IGT - - - - VGT - - - - VGD 0.2 IH - - 6.0 - 50 m... |
| Description |
Triacs Silicon Bidirectional Thyristors
|
| File Size |
59.02K /
6 Page |
View
it Online |
Download Datasheet
|
|

Price and Availability
|