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  typo Datasheet PDF File

For typo Found Datasheets File :: 753    Search Time::0.953ms    
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    FREESCALE
Part No. MC56F8322
OCR Text ...nitial Public Release Corrected typo in Table 10-4, Flash Endurance is 10,000 cycles. Addressed additional grammar issues Added Package Pins to GPIO table in Section 8. Clarification of TRST usage in this device. Replacing TBD Typical Min w...
Description The 56F8322 and 56F8122 are members of the 56800E core-based family of controllers. Each combines

File Size 720.49K  /  136 Page

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    MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
Part No. MC56F8322VFA60 56F8322 MC56F8322 MC56F8322MFA60
OCR Text ...nitial Public Release Corrected typo in Table 10-4, Flash Endurance is 10,000 cycles. Addressed additional grammar issues Rev 4.0 Freescale Semiconductor, Inc... Added Package Pins to GPIO table in Section 8 Clarification of TRST usag...
Description 56F8322 16-bit Hybrid Controller

File Size 1,130.91K  /  128 Page

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    K4D553238F-GC33 K4D553238F-GC36 K4D553238F-GC2A K4D553238F K4D553238F-GC

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. K4D553238F-GC33 K4D553238F-GC36 K4D553238F-GC2A K4D553238F K4D553238F-GC
OCR Text ...Revision 1.3(March 11, 2005) * typo corrected 256M GDDR SDRAM Revision 1.2(February 23, 2005) * typo corrected Revision 1.1 (December 29, 2004) * typo corrected Revision 1.0 (November 11, 2004) * Defined DC specification * C...
Description 256Mbit GDDR SDRAM 56Mbit GDDR SDRAM内存

File Size 307.09K  /  17 Page

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    MC56F8122 MC56F8322 56F8122 56F8322

MOTOROLA[Motorola, Inc]
Part No. MC56F8122 MC56F8322 56F8122 56F8322
OCR Text ...nitial Public Release Corrected typo in Table 10-4, Flash Endurance is 10,000 cycles. Addressed additional grammar issues Added Package Pins to GPIO table in Section 8. Clarification of TRST usage in this device. Replacing TBD Typical Min w...
Description 16-bit Hybrid Controllers

File Size 816.24K  /  136 Page

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    K4H560838E K4H560838E-TC_LB3 K4H560438E-TC_LA2 K4H560438E-TC_LAA K4H560438E-TC_LB0 K4H560438E-TC_LB3 K4H560838E-TC_LA2 K

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4H560838E K4H560838E-TC_LB3 K4H560438E-TC_LA2 K4H560438E-TC_LAA K4H560438E-TC_LB0 K4H560438E-TC_LB3 K4H560838E-TC_LA2 K4H560838E-TC_LAA K4H560838E-TC_LB0 K4H560838E-TC/LA2 K4H560838E-TC/LAA K4H560838E-TC/LB0 K4H560838E-TC/LB3
OCR Text ... 1.1 (August, 2003) - Corrected typo. Revision1.2 (October, 2004) - Corrected typo. Revision1.3 (April, 2005) - Added notice and corrected typo. DDR SDRAM Rev. 1.3 April. 2005 DDR SDRAM 256Mb E-die (x4, x8) Key Features * Double-...
Description DDR SDRAM 256Mb E-die (x4, x8)

File Size 211.78K  /  24 Page

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    MC56F8323MFB60 MC56F8123VFB MC56F8123 MC56F8323VFB60 56F8123 56F8300 56F8322 56F8323 MC56F8323

MOTOROLA[Motorola, Inc]
Part No. MC56F8323MFB60 MC56F8123VFB MC56F8123 MC56F8323VFB60 56F8123 56F8300 56F8322 56F8323 MC56F8323
OCR Text ...nitial Public Release Corrected typo in Table 10-4, Flash Endurance is 10,000 cycles. Addressed additional grammar issues. Added Package Pins to GPIO Table in Section 8. Removed reference to pin group 9 in Table 10-5. Replacing TBD Typical ...
Description 16-bit Hybrid Controllers

File Size 835.30K  /  140 Page

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    Samsung
Part No. M378B5173BH0
OCR Text ...jan. 2012 - j.y.lee - corrected typo 1.21 - corrected typo (tckmin) mar. 2012 - j.y.lee 1.3 - added module line up (4gb non ecc udimm) may. 2012 - j.y.lee - added idd(1866mbps) values - 3 - datasheet ddr3 sdram rev. 1.3 unbuffered dimm...
Description 240pin Unbuffered DIMM based on 4Gb B-die

File Size 1,048.86K  /  40 Page

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    M464S3254ETS-C7A M464S3254ET M464S3254ETS M464S1654ETS M464S1654ETS-C7A M464S6454EN0 M464S6453EN0-C7A

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. M464S3254ETS-C7A M464S3254ET M464S3254ETS M464S1654ETS M464S1654ETS-C7A M464S6454EN0 M464S6453EN0-C7A
OCR Text ....1 (Sepember, 2003) - Corrected typo. Revision 1.2 (February, 2004) - Corrected typo. Revision 1.3 (March. 2004) - Corrected package dimension. Revision 1.4 (March. 2004) - Modified DC Characteristics Notes. Revision 1.5 (May. 2004) - Added...
Description    SDRAM Unbuffered SODIMM

File Size 266.57K  /  18 Page

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    Samsung
Part No. K4B1G1646E
OCR Text ...09 - s.h.kim 1.01 - corrected typo. june. 2009 - s.h.kim 1.1 - add iddq2nt, iddq4r, idd8 specification july. 2009 - s.h.kim 1.2 - corrected ac timing table sep. 2009 - s.h.kim 1.3 - added idd current specification for ddr3-1600 oct...
Description 1Gb E-die DDR3 SDRAM

File Size 808.71K  /  62 Page

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    K4D263238G-VC K4D263238G-GC36 K4D263238G-GC K4D263238G-GC2A K4D263238G-GC33

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4D263238G-VC K4D263238G-GC36 K4D263238G-GC K4D263238G-GC2A K4D263238G-GC33
OCR Text ...38G-VC2A and K4D263238G-VC33. * typo corrected Revision 1.5 (December 29, 2004) * Added tCK(min)=5ns @ CL3 * Changed tCK(max) of K4D263238G-GC2A from 4ns to 10ns Revision 1.4 (November 30, 2004) * typo Corrected in DC table Revis...
Description 128Mbit GDDR SDRAM

File Size 427.94K  /  20 Page

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For typo Found Datasheets File :: 753    Search Time::0.953ms    
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