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trench-gate Datasheet PDF File

For trench-gate Found Datasheets File :: 8830 Search Time::2.203ms
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				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BUK7518-30
OCR Text	...or in a plastic envelope using 'trench' technology. The device features very low on-state resistance and has integral zener diodes giving ES...gate drain source drain DESCRIPTION PIN CONFIGURATION tab SYMBOL d g s 1 23 LIMITIN...
Description	TrenchMOS transistor Standard level FET
File Size	43.83K / 8 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BUK7518-55
OCR Text	...or in a plastic envelope using 'trench' technology. The device features very low on-state resistance and has integral zener diodes giving ES...gate drain source drain DESCRIPTION PIN CONFIGURATION tab SYMBOL d g s 1 23 LIMITIN...
Description	TrenchMOS transistor Standard level FET
File Size	63.29K / 8 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	FDC638 FDC638P
OCR Text	...13nC typical). High performance trench technology for extremely low R DS(ON). SuperSOT -6 package: small footprint (72% smaller than standar...Gate-Source Voltage - Continuous Drain Current - Continuous - Pulsed -4.5 -20 PD Maximum Po...
Description	P-Channel 2.5V Specified PowerTrenchTM MOSFET
File Size	199.38K / 9 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FDS6690S
OCR Text	... nC typical) * High performance trench technology for extremely low RDS(ON) * High power and current handling capability Applications * ...Gate-Source Voltage Drain Current - Continuous - Pulsed T A=25oC unless otherwise noted Parame...
Description	30V N-Channel PowerTrench SyncFET?/a>
File Size	260.91K / 9 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	FDS6692
OCR Text	...converter * High performance trench technology for extremely low RDS(ON) * Low gate charge (18 nC typical) * High power and current handling capability D D D D 5 6 4 3 2 1 SO-8 S S S G 7 8 Absolute Maximum ...
Description	30V N-Channel PowerTrench MOSFET
File Size	60.98K / 4 Page	View it Online	Download Datasheet

				http:// FAIRCHILD[Fairchild Semiconductor]
Part No.	FDS6694
OCR Text	... nC typical) * High performance trench technology for extremely low RDS(ON) * High power and current handling capability. Applications *...Gate-Source Voltage Drain Current - Continuous - Pulsed Parameter Ratings 30 16 (Note 1a) ...
Description	30V N-Channel Fast Switching PowerTrench MOSFET
File Size	62.55K / 5 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	FDS9933A
OCR Text	...itching speed. High performance trench technology for extremely low RDS(on). High power and current handling capability. @ VGS = -4.5 V RDS(...Gate-Source Voltage Drain Current - Continuous - Pulsed TA=25 C unless otherwise noted o Pa...
Description	Dual N-Channel 2.5V Specified PowerTrench MOSFET
File Size	190.13K / 8 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	FDS9933
OCR Text	... gate charge * High performance trench technology for extremely low RDS(ON) * High power and current handling capability Applications * ...Gate-Source Voltage Drain Current - Continuous - Pulsed TA=25oC unless otherwise noted Paramet...
Description	Dual P-Channel 2.5V Specified PowerTrench MOSFET
File Size	91.91K / 5 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	NDS9410 NDS9410A 9410A
OCR Text	...S = 4.5 V * High performance trench technology for extremely low RDS(ON) * High power and current handling capability in a widely used su...Gate-Source Voltage Drain Current - Continuous - Pulsed TA=25 C unless otherwise noted o Pa...
Description	Single N-Channel Enhancement Mode Field Effect Transistor
File Size	229.54K / 8 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	SI3457DV
OCR Text	... gate charge * High performance trench technology for extremely low RDS(ON) RDS(ON) = 50 m @ VGS = -10 V RDS(ON) = 75 m @ VGS = -4.5 V Ap...Gate-Source Voltage Drain Current - Continuous - Pulsed Maximum Power Dissipation TA=25oC unless ...
Description	Single P-Channel Logic Level PowerTrench MOSFET
File Size	80.13K / 5 Page	View it Online	Download Datasheet

For trench-gate Found Datasheets File :: 8830 Search Time::2.203ms
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