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submicron Datasheet PDF File

For submicron Found Datasheets File :: 1620 Search Time::1.656ms
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				HP[Agilent(Hewlett-Packard)]
Part No.	ADA-4643-TR2 ADA-4643-BLK ADA-4643-BLKG ADA-4643-TR1 ADA-4643-TR1G ADA-4643-TR2G ADA-4643
OCR Text	...licon process with self-aligned submicron emitter geometry. The process is capable of simultaneous high fT and high NPN breakdown (25 GHz fT at 6V BVCEO). The process utilizes industry standard device oxide isolation technologies and submic...
Description	Silicon Bipolar Darlington Amplifier
File Size	106.50K / 10 Page	View it Online	Download Datasheet

				Agilent(Hewlett-Packard)
Part No.	ADA-4543 ADA-4543-BLK ADA-4543-BLKG ADA-4543-TR1 ADA-4543-TR1G ADA-4543-TR2 ADA-4543-TR2G
OCR Text	...licon process with self-aligned submicron emitter geometry. The process is capable of simultaneous high fT and high NPN breakdown (25 GHz fT at 6V BVCEO). The process utilizes industry standard device oxide isolation technologies and submic...
Description	Silicon Bipolar Darlington Amplifier
File Size	107.02K / 10 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics]
Part No.	TSA0801 TSA0801CF TSA0801CFT TSA0801IF TSA0801IFT
OCR Text	submicron s s s s s s s s CMOS technology Single supply voltage: 2.5V Input range: 2Vpp differential 40Msps sampling frequency Ultra low power consumption: 40mW @ 40MHz (10mW @ 5Msps) ENOB=7.9 @ Nyquist SFDR typically up to 67dB @ Fs=40Msp...
Description	8-BIT, 40MSPS, 40mW A/D CONVERTER
File Size	221.15K / 20 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard)
Part No.	ADA-4543
OCR Text	...licon process with self-aligned submicron emitter geometry. The process is capable of simultaneous high fT and high NPN breakdown (25 GHz fT at 6V BVCEO). The process utilizes industry standard device oxide isolation technologies and submic...
Description	ADA-4543 · Silicon Bipolar Darlington Amplifier
File Size	113.55K / 11 Page	View it Online	Download Datasheet

				http:// Agilent(Hewlett-Packard)
Part No.	ABA-32563 ABA-32563-BLKG ABA-32563-TR1G ABA-32563-TR2G
OCR Text	...licon process with self-aligned submicron emitter geometry. The process is capable of simultaneous high fT and high NPN breakdown (25 GHz fT at 6V BVCEO). The process utilizes industry standard device oxide isolation technologies and submic...
Description	2.5 GHz Broadband Silicon RFIC Amplifier
File Size	100.15K / 8 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard)
Part No.	ABA-32563
OCR Text	...licon process with self-aligned submicron emitter geometry. The process is capable of simultaneous high fT and high NPN breakdown (25 GHz fT at 6V BVCEO). The process utilizes industry standard device oxide isolation technologies and submic...
Description	ABA-32563 · Low Cost Broadband Silicon RFIC Amplifier
File Size	106.68K / 9 Page	View it Online	Download Datasheet

				http:// HP[Agilent(Hewlett-Packard)]
Part No.	ABA-52563-BLK ABA-52563-TR1 ABA-52563-TR2 ABA-52563-TR2G ABA-52563 ABA-52563-BLKG ABA-52563-TR1G
OCR Text	...licon process with self-aligned submicron emitter geometry. The process is capable of simultaneous high fT and high NPN breakdown (25 GHz fT at 6V BVCEO). The process utilizes industry standard device oxide isolation technologies and submic...
Description	3.5 GHz Broadband Silicon RFIC Amplifier
File Size	92.35K / 8 Page	View it Online	Download Datasheet

				Integrated Device Technology
Part No.	IDT72805LB IDT72805LB20BG IDT72805LB25BG IDT72805LB35BG IDT72815LB IDT72815LB20BG IDT72815LB25BG IDT72815LB35BG IDT72825LB IDT72825LB20BG IDT72825LB25BG IDT72825LB35BG
OCR Text	...edance state * High-performance submicron CMOS technology * Available in a 121-lead, 16 x 16 mm plastic Ball Grid Array (BGA) * Industrial temperature range (-40oC to +85oC) is available, tested to military electrical specifications DESC...
Description	CMOS DUAL SyncFIFO DUAL 256 x 18, DUAL 512 x 18, DUAL 1024 x 18
File Size	198.68K / 20 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard)
Part No.	DEMO-ABA-5XX63 ABA-52563
OCR Text	...licon process with self-aligned submicron emitter geometry. The process is capable of simultaneous high fT and high NPN breakdown (25 GHz fT at 6V BVCEO). The process utilizes industry standard device oxide isolation technologies and submic...
Description	ABA-52563 · Low Noise Broadband Silicon RFIC Amplifier
File Size	98.88K / 9 Page	View it Online	Download Datasheet

				IDT[Integrated Device Technology]
Part No.	IDT72V845L20PFI IDT72V845L20PF IDT72V845L15PFI IDT72V845L15PF IDT72V845L10PFI IDT72V845L10PF IDT72V845 IDT72V805L20PFI IDT72V805L20PF IDT72V805L15PF IDT72V805L10PFI IDT72V805L10PF IDT72V805 72V805_DS_41081 IDT72V815L10PF IDT72V815L10PFI IDT72V805L15PFI IDT72V815 IDT72V815L15PF IDT72V815L15PFI IDT72V815L20PF IDT72V815L20PFI IDT72V825 IDT72V825L10PF IDT72V825L10PFI IDT72V825L15PF IDT72V825L15PFI IDT72V825L20PF IDT72V825L20PFI IDT72V835 IDT72V835L10PF IDT72V835L10PFI IDT72V835L15PF IDT72V835L15PFI IDT72V835L20PF IDT72V835L20PFI IDT72V835L10PF8 IDT72V835L15PF8 IDT72V835L15PFI8 IDT72V835L20PF8 IDT72V805L10PF8 IDT72V845L10PF8 IDT72V845L15PF8 IDT72V845L15PFI8
OCR Text	...mpedance state High-performance submicron CMOS technology Available in a 128-pin thin quad flatpack (TQFP) Industrial temperature range (-40C to +85C) is available DESCRIPTION: The IDT72V805/72V815/72V825/72V835/72V845 are dual 18-bit-w...
Description	4K x 18 DualSync FIFO, 3.3V 3.3 VOLT CMOS DUAL SyncFIFO DUAL 256 x 18, DUAL 512 x 18, DUAL 1,024 x 18, DUAL 2,048 x 18 From old datasheet system 3.3 VOLT CMOS DUAL SyncFIFO DUAL 256 x 18 DUAL 512 x 18 DUAL 1024 x 18 DUAL 2048 x 18 2K x 18 DualSync FIFO, 3.3V 256 x 18 DualSync FIFO, 3.3V
File Size	485.97K / 26 Page	View it Online	Download Datasheet

For submicron Found Datasheets File :: 1620 Search Time::1.656ms
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