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  res-140 Datasheet PDF File

For res-140 Found Datasheets File :: 3153    Search Time::1.812ms    
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    CPV363M4U

International Rectifier
Part No. CPV363M4U
OCR Text ...pf v cc = 30v see fig. 7 c res reverse transfer capacitance CCC 14 CCC ? = 1.0mhz t rr diode reverse recovery time CCC 42 60 ns t j = ...140 160 1.0 2.0 3.0 t , junction temperature ( c) v , collector-to-emitter voltage(v) j ce v...
Description 600V UltraFast 8-60 kHz 3-Phase Bridge IGBT in a IMS-2 package

File Size 274.19K  /  10 Page

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    Renesas Electronics Corporation
Part No. CR12CM-12B-A8 CR12CM-12B-13 CR12CM-12B-15
OCR Text ... 6 4 4 8 4 0 32 2 4 16 0 8 360 res i st i ve, i nduct i ve l oads 32 0 4 81216 2 4 28 20 160 120 100 60 20 0 4 0 80 1 4 0 180 2 7 0 = 3...140 100 20 60 0 typical example gate trigger current vs. gate current pulse width 100 (%) gate tri...
Description Thyristor Medium Power Use
600V - 12A - Thyristor

File Size 128.45K  /  9 Page

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    Monolithic Power System...
Part No. MPQ20051DQ
OCR Text ...c1h561ja01j 1 r1 3.74k ? film res., 1% 0603 yageo rc0603fr-073k74l 1 r2 10k ? film res., 1% 0603 yageo rc0603jr-0710kl r3 10...140 1.8 1.9 2.0 2.1 2.2 2.3 -40 -10 20 50 80 110 140 50 90 130 170 210 250 -40 -10 20 50 80 110 140 ...
Description Low Noise, High PSRR, 1A Linear Regulator EV Board

File Size 371.91K  /  6 Page

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    IRG4BC10KPBF

International Rectifier
Part No. IRG4BC10KPBF
OCR Text ... pf v cc = 30v see fig. 7 c res reverse transfer capacitance ? 7.5 ? ? = 1.0mhz t rr diode reverse recovery time ? 28 42 ns t j = 25c ...140 160 1.0 2.0 3.0 4.0 5.0 t , junction temperature ( c) v , collector-to-emitter voltage(v)...
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

File Size 269.26K  /  11 Page

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    GA100NA60U GA100NA60UP

Vishay Siliconix
Part No. GA100NA60U GA100NA60UP
OCR Text ... reverse transfer capacitance c res -90 - diode reverse recovery time t rr t j = 25 c see fig. 13 i f = 50 a v r = 200 v di/dt = 200 a/s - 90 140 ns t j = 125 c - 120 180 diode peak reverse recovery current i rr t j = 25 c see fig. ...
Description Insulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 100 A

File Size 249.80K  /  10 Page

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    CPV363MK

International Rectifier
Part No. CPV363MK
OCR Text ... v cc = 30v see fig. 7 c res reverse transfer capacitance ---- 9.3 ---- ? = 1.0mhz t rr diode reverse recovery time ---- 42 60 ns t ...140 160 c ce v , collector-to-emitter voltage (v) v = 15v 80s pulse width ge t , case te...
Description 600V 3-Phase Bridge IGBT in a IMS-2 package

File Size 169.83K  /  9 Page

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    B37923

EPCOS
Part No. B37923
OCR Text ...e 0402, 50 vdc capacitance pf f res 1) mhz esr @ 1 ghz 2) m q @ 1 ghz 2) esr @ f res 2) m 0,3 23400 560 920 710 0,4 20350 490 8...140 6,8 4100 130 155 125 8,2 3650 120 140 115 10 3350 110 120 105 12 3350 102 104 94 15 2600 92 88 8...
Description (B37923 / B37933) Ultra-low ESR and high Q factor

File Size 150.23K  /  14 Page

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    IRG4BC30U-S

International Rectifier, Corp.
Part No. IRG4BC30U-S
OCR Text ... pf v cc = 30v see fig.7 c res reverse transfer capacitance 14 ? = 1.0mhz parameter min. typ. max. units conditions v (br)ces collect...140 160 ce v , c ollector-to-em itter voltage (v) v = 1 5v 80s pulse w idth ge a t , ju...
Description INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT(Vces=600V, Vce(on)typ. = 1.95V, @Vge=15V, Ic=12A) 绝缘栅双极晶体管IGBT的速度超快速(VCES和\u003d 600V电压的Vce(on)的典型。\u003d 1.95V,@和VGE \u003d 15V的,集成电路\u003d 12A条)
600V UltraFast 8-60 kHz Discrete IGBT in a D2-Pak package

File Size 315.06K  /  8 Page

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    IRG4PC50S-P

International Rectifier
Part No. IRG4PC50S-P
OCR Text ... pf v cc = 30v see fig. 7 c res reverse transfer capacitance ? 48 ? ? = 1.0mhz parameter min. typ. max. units conditions v (br)ces colle...140 160 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 t , junction temperature ( c) v , collector-to-emitte...
Description 600V DC-1 kHz (Standard) Discrete IGBT in a SM TO-247 package

File Size 141.87K  /  8 Page

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For res-140 Found Datasheets File :: 3153    Search Time::1.812ms    
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