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				IRF[International Rectifier]
Part No.	IRF840A
OCR Text	MOSFET IRF840A HEXFET(R) Power MOSFET Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed po...n junction diode. --- --- 2.0 V TJ = 25C, IS = 8.0A, VGS = 0V --- 422 633 ns TJ = 25C, IF = 8.0A --...
Description	Power MOSFET(Vdss=500V/ Rds(on)max=0.85ohm/ Id=8.0A) Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A) Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0A)
File Size	87.92K / 8 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	IRF840B IRFS840B IRFS840 IRF840
OCR Text	MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state res...
Description	500V N-Channel MOSFET
File Size	908.43K / 10 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF840LCL IRF840LCS
OCR Text	MOSFET l l l l l l Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V VGS Rating Reduced CISS, COSS, CRSS Extremely High ...n junction diode. --- --- 2.0 V TJ = 25C, IS = 8.0A, VGS = 0V --- 490 740 ns TJ = 25C, IF = 8.0A --...
Description	Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A) 功率MOSFET（减振钢板基本\u003d 500V及的Rds（on）\u003d 0.85ohm，身份证\u003d 8.0A Power MOSFET(Vdss=500V Rds(on)=0.85ohm Id=8.0A)
File Size	169.91K / 10 Page	View it Online	Download Datasheet

				Samsung semiconductor International Rectifier Intersil Corporation
Part No.	IRF9150
OCR Text	MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guarant...N Junction Diode G D MIN - TYP - MAX -25 -100 UNITS A A S Source to Drain Diode V...
Description	-25A, -100V, 0.150 Ohm, P-Channel Power MOSFET
File Size	56.86K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9230 JANTXV2N6806 JANTX2N6806
OCR Text	...tifier's advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest "State of the Art" design ac...n n n n n Repetitive Avalanche Ratings Dynamic dv/dt Rating Hermetically Sealed Simple Drive Requ...
Description	TRANSISTORS P-CHANNEL(Vdss=-200V, Rds(on)=0.80ohm, Id=-6.5A) CAP CER 250VAC 82PF 5% SL 1808 6.5 A, 200 V, 0.92 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA
File Size	148.64K / 7 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF9410
OCR Text	MOSFET 8 7 Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated S S S G 1 2 A A D D D D VDSS = 30V 3 6 4 5 RDS(on) = 0....
Description	Power MOSFET(Vdss=30V, Rds(on)=0.030ohm)
File Size	103.18K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9520NL IRF9520NS
OCR Text	MOSFET Advanced Process Technology Surface Mount (IRF9520S) l Low-profile through-hole (IRF9520L) l 175C Operating Temperature l Fast Switc...n junction diode. S --- --- -1.6 V TJ = 25C, IS = -4.0A, VGS = 0V --- 100 150 ns TJ = 25C, IF = -4....
Description	Power MOSFET(Vdss=-100V/ Rds(on)=0.48ohm/ Id=-6.8A) Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A) Power MOSFET(Vdss=-100V Rds(on)=0.48ohm Id=-6.8A)
File Size	151.66K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9520N
OCR Text	MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175C Operating Temperature Fast Switching P-Channel Fully Avalanche ...n junction diode. S --- --- -1.6 V TJ = 25C, IS = -4.0A, VGS = 0V --- 100 150 ns TJ = 25C, IF = -4....
Description	Power MOSFET(Vdss=-100V Rds(on)=0.48ohm Id=-6.8A) Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A)
File Size	91.94K / 8 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	IRF9520 FN2281
OCR Text	MOSFET This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche m...N Junction Diode G D MIN - TYP - MAX -6.0 -24 UNITS A A S Source to Drain Diode V...
Description	6A, 100V, 0.600 Ohm, P-Channel Power MOSFET(6A, 100V, 0.600 惟, P娌?????MOS?烘?搴??) From old datasheet system 6A 100V 0.600 Ohm P-Channel Power MOSFET 6A/ 100V/ 0.600 Ohm/ P-Channel Power MOSFET
File Size	57.36K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9530NL IRF9530NS IRF9530NSTRR
OCR Text	MOSFET Advanced Process Technology Surface Mount (IRF9530NS) l Low-profile through-hole (IRF9530NL) l 175C Operating Temperature l Fast Swi...n junction diode. S --- --- -1.6 V TJ = 25C, IS = -8.4A, VGS = 0V --- 130 190 ns TJ = 25C, IF = -8....
Description	Power MOSFET(Vdss=-100V/ Rds(on)=0.20ohm/ Id=-14A) Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A)
File Size	169.24K / 10 Page	View it Online	Download Datasheet

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