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INTERSIL[Intersil Corporation]
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| Part No. |
HGT1S3N60B3DS HGTP3N60B3D FN4414
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| OCR Text |
...TP3N60B3D and HGT1S3N60B3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. The...1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Pro... |
| Description |
7A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 7A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode From old datasheet system
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| File Size |
153.27K /
7 Page |
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it Online |
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INTERSIL[Intersil Corporation]
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| Part No. |
HGT1S3N60C3DS HGTP3N60C3D FN4140
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| OCR Text |
...P3N60C3D, and HGT1S3N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. The...1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Pro... |
| Description |
6A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes 6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes From old datasheet system
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| File Size |
272.82K /
7 Page |
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it Online |
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INTERSIL[Intersil Corporation]
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| Part No. |
HGTP3N60A4D HGT1S3N60A4DS FN4818
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| OCR Text |
...N60A4DS and the HGTP3N60A4D are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. The...1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Pro... |
| Description |
600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600V SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode From old datasheet system
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| File Size |
129.16K /
10 Page |
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it Online |
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INTERSIL[Intersil Corporation]
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| Part No. |
HGTP3N60B3 HGT1S3N60B3S HGTD3N60B3S FN4368
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| OCR Text |
...HGT1S3N60B3S and HGTP3N60B3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipol... |
| Description |
7A/ 600V/ UFS Series N-Channel IGBTs 7A, 600V, UFS Series N-Channel IGBTs From old datasheet system
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| File Size |
140.49K /
7 Page |
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it Online |
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INTERSIL[Intersil Corporation]
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| Part No. |
HGTP3N60C3 HGTD3N60C3S FN4139
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| OCR Text |
...D3N60C3S and the HGTP3N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. The...1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Pro... |
| Description |
6A/ 600V/ UFS Series N-Channel IGBTs 6A, 600V, UFS Series N-Channel IGBTs From old datasheet system
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| File Size |
242.35K /
6 Page |
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it Online |
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njr
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| Part No. |
NJU7094
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| OCR Text |
MOS OPERATIONAL AMPLIFIER
GENERAL DESCRIPTION The NJU7094,95 and 96 are dual C-MOS operational amplifiers operated on a single-power-suppl...1~5.5V ) Wide Output Swing Range ( VOM=2.9V min. @ 3.0V ) Low Operating Current Low Bias Current ... |
| Description |
LOW-POWER AND LOW-OFFSET-VOLTAGE From old datasheet system
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| File Size |
275.08K /
9 Page |
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it Online |
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