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ADPOW[Advanced Power Technology]
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| Part No. |
TAN350
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| OCR Text |
MHz
GENERAL DESCRIPTION
The TAN350 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization and diffused ballasting for proven high... |
| Description |
high power COMMON BASE bipolar transistor.
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| File Size |
707.44K /
4 Page |
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GHZTECH[GHz Technology]
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| Part No. |
TAN75A
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| OCR Text |
MHz
GENERAL DESCRIPTION
The TAN75A is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization and diffused ballasting for proven high... |
| Description |
75 Watts, 50 Volts, Pulsed Avionics 960 - 1215 MHz
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| File Size |
269.86K /
3 Page |
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ERICSSON[Ericsson]
Ericsson Microelectronics
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| Part No. |
PTF10015
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| OCR Text |
MHz GOLDMOSTM Field Effect Transistor
Description
The PTF 10015 is a 50 Watt LDMOS FET intended for large signal amplifier applications from 300 to 960 MHz. It operates at 55% efficiency and 13.0 dB of gain. Nitride surface passivation an... |
| Description |
50 Watts/ 300-960 MHz GOLDMOS Field Effect Transistor
50 Watts, 300-960 MHz GOLDMOS Field Effect Transistor
50 Watts, 30060 MHz GOLDMOS Field Effect Transistor
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| File Size |
220.13K /
6 Page |
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Ericsson Microelectronics
ERICSSON[Ericsson]
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| Part No. |
PTF10009
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| OCR Text |
...liability. * Performance at 960 MHz, 28 Volts - Output Power = 85 Watts - Power Gain = 13.0 dB Typ - Efficiency = 50% Typ Full Gold Metallization Silicon Nitride Passivated Excellent Thermal Stability 100% lot traceability
* * * *
Typ... |
| Description |
85 Watts, 1.0 GHz GOLDMOS?/a> Field Effect Transistor
85 Watts, 1.0 GHz GOLDMOS Field Effect Transistor
85 Watts, 1.0 GHz GOLDMOS⑩ Field Effect Transistor
85 Watts, 1.0 GHz GOLDMOSField Effect Transistor
85 Watts/ 1.0 GHz GOLDMOS Field Effect Transistor
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| File Size |
227.70K /
6 Page |
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CETC
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| Part No. |
SP940
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| OCR Text |
...requency fc mhz - 940.5 - - insertion loss 921~960 mhz i.l. db - 3 4.5 - ripple 921~960 mhz db - 1.5 2.9 - vswr 921~960 mhz - 1.8 3.0 attenuation: ( reference leve... |
| Description |
RF SAW Filter
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| File Size |
738.95K /
6 Page |
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it Online |
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PDI[PREMIER DEVICES, INC.]
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| Part No. |
PI0943DG-21H
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| OCR Text |
...ons
Parameter Frequency Range (MHz) Insertion Loss (dB) Isolation (dB) Return Loss (dB) IMD (dBc) 2T x 37.5 Watts 20 20 -70 Minimum 925 <. 15 >25 >23 -75 Typical Maximum 960 .30
Absolute Maximum Ratings
Parameter Forward Power Reverse ... |
| Description |
DROP-IN ISOLATOR
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| File Size |
85.94K /
1 Page |
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it Online |
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意法半导
STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
PD57006TR-E PD57006-E PD57006S-E PD57006STR-E
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| OCR Text |
...8 V VDS = 28 V VDS = 28 V f = 1 MHz f = 1 MHz f = 1 MHz 0.58 27 14 0.9 2.0 Min 65 1 1 5.0 0.9 A A V V mho pF pF pF Typ Max Unit
2.2
Dy...960 ZIN () 3.794 - j 1.632 4.039 - j 2.300 4.250 - j 3.791 ZDL() 3.513 + j 10.81 3.862 + j 10.58 4.0... |
| Description |
RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs
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| File Size |
367.15K /
22 Page |
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it Online |
Download Datasheet |
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Price and Availability
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