| Description |
16KBit, 8KBit, 4KBit, 2KBit and 1KBit Serial I2C Bus EEPROM<Br>Microprocessor Crystal; Frequency:22.1184MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:40ohm; Leaded Process CompatiBle:Yes; Mounting Type:Through Hole; Oscillator Type:TCXO RoHS Compliant: Yes<Br>Microprocessor Crystal; Frequency:48MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:25ohm; Leaded Process CompatiBle:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes<Br>CRYSTAL 9.84375MHZ 10PF SMD<Br>UHF power transistor<Br>NPN 2 GHz RF power transistor - @ f: 1900 MHz; @ f1: 1900 ; GB>UMB>: 7 dB; GB>UMB> @ f1: 7 dB; IB>CB>: 250 mA; PB>totB>: 250 mW; Polarity: NPN ; VCEO max: 8 V<Br>CRYSTALS 20/0.035 -40 85 12.5P 32.768KHZ 3.2X1.5X0.8MM 2 PAD<Br>MMIC variaBle gain amplifier<Br>AB 3C 3#12 SKT RECP<Br>Microprocessor Crystal; Frequency:8.192MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:35ohm; Leaded Process CompatiBle:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes<Br>Microprocessor Crystal; Frequency:8MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:35ohm; Leaded Process CompatiBle:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes<Br>Single 10 Bits ADC, up to 30 MHz, 40 MHz or 50 MHz, with voltage regulator<Br>Schottky Barrier douBle diodes - CB>dB> max.: 100@VR=4V pF; Configuration: dual c.a. ; IB>FB>: 1 A; IB>FSMB> max: 10 A; IB>RB> max: 1@VR=25V mA; VB>FB>max: 450@IF=1A mV; VB>RB>: 25 V<Br>XTL, OSC, 50.000 MHZ, 100PPM<Br>Microprocessor Crystal; Frequency:27MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:40ohm; Leaded Process CompatiBle:Yes; Mounting Type:Through Hole; Oscillator Type:TCXO RoHS Compliant: Yes<Br>Schottky Barrier diode - CB>dB> max.: 10@VR=1V pF; Configuration: single ; IB>FB> max: 200 mA; IB>FSMB> max: 300 A; IB>RB> max: 2.3@VR=25VA; VB>FB>max: 400@IF=10mA mV; VB>RB> max: 30 V<Br>CONNECTOR ACCESSORY<Br>PNP/PNP matched douBle transistors<Br>IC,Normally-Open PC-Mount Solid-State Relay,1-CHANNEL,SIP<Br>AB 17C 17#16 PIN RECP<Br>45 V, 100 mA NPN general-purpose transistors<Br>NPN/PNP general purpose transistor - Description: Matched Pair<Br>IC,Normally-Open PC-Mount Solid-State Relay,1-CHANNEL,M:ML043MW015<Br>CRYSTAL 4.897MHZ 20PF SMD<Br>Thyristors - IB>GTB>: 32 mA; IB>TB> (RB>MSB>): 20 A; VB>DRMB>: 650 V<Br>Thyristors - IB>GTB>: 32 mA; IB>TB> (RB>MSB>): 20 A; VB>DRMB>: 800 V<Br>POT 200 OHM 3/4 RECT CERM MT<Br>Thyristors logic level for RCD/GFI/LCCB applications - IB>GTB>: 0.2 (min 0.02) mA; IB>TB> (RB>MSB>): 0.8 A; VB>DRMB>: 500 V<Br>Thyristors logic level for RCD/GFI/LCCB applications - IB>GTB>: 0.2 (min 0.02) mA; IB>TB> (RB>MSB>): 0.8 A; VB>DRMB>: 600 V<Br>Microprocessor Crystal; Frequency:50MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:25ohm; Leaded Process CompatiBle:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes<Br>Microprocessor Crystal; Frequency:6MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:40ohm; Leaded Process CompatiBle:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes<Br>Microprocessor Crystal; Frequency:5MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:50ohm; Leaded Process CompatiBle:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes<Br>PowerMOS transistor Logic level TOPFET - @ VB>ISB>: 5 V; IB>DB>: 15 A; NumBer of pins: 3 ; RB>DS(on)B>: 0.125 mOhm; VB>DSB>max: 50 V<Br>Solder Masking Agent; Dispensing Method:Jar; Features:For Lead-Free Applications; Used w/Tin/Lead Solders; Provides Short-Term High-Temp. Protection; Leaded Process CompatiBle:Yes; Volume:1gallon (US) RoHS Compliant: Yes<Br>CRYSTAL 6.7458MHZ 20PF SMD<Br>Microprocessor Crystal; Frequency:3.579545MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:180ohm; Leaded Process CompatiBle:Yes; Mounting Type:Through Hole; Oscillator Type:TCXO RoHS Compliant: Yes<Br>RES ARRAY 24 OHM 8TRM 4RES SMD<Br>SO8, 1MBIT/S HI SPEED DUAL CHANNEL TRANSISTOR - 15kV/us; Package: SOIC-W; No of Pins: 8; Container: Box<Br>NPN 5 GHz wideBand transistor - @ f: 1000 MHz; @ f1: 1000 ; @ f2: 2000 ; @ IC: 14 mA; fT: 5 GHz; Frequency: 3 MHz; GUM @ f1: 14 dB; GUM @ f2: 8 dB; Gain @ 900 Mhz: 14 dB; IC: 25 mA; Noise figure: 3@f22.1@f1 dB; Ptot: 300<Br>High-speed switching diodes - Cd max.: 1.5 pF; Configuration: quad c.c./c.c. ; IF max: 250 mA; IFSM max: 4 A; IR max: 500@VR=80V nA; IFRM: 450 mA; trr max: 4 ns; VFmax: 1@IF=50mA mV; VR max: 100 V<Br>Thyristors logic level for RCD/GFI/LCCB applications - IGT: 0.2 (min 0.02) mA; IT (RMS): 0.8 A; VDRM: 500 V<Br>Low-leakage diode - Cd max.: 2 pF; Configuration: single ; IF max: 200 mA; IFSM max: 4 A; IR max: 5@VR=75V nA; IFRM: 500 mA; trr max: 3000 ns; VFmax: 1@IF=10mA mV; VR max: 75 V<Br>Low-leakage diode - Cd max.: 4 pF; Configuration: single ; IF max: 250 mA; IFSM max: 4 A; IR max: 1@VR=125V nA; IFRM: 625 mA; trr max: 1500 ns; VFmax: 1@IF=100mA mV; VR max: 125 V<Br>NPN 7GHz wideBand transistor - @ f: 500 MHz; @ f1: 500 ; @ f2: 800 ; @ IC: 100 mA; fT: 7 GHz; GUM: 16 dB; GUM @ f1: 16 dB; GUM @ f2: 12 dB; IC: 150 mA; Ptot: 1000 mW; Polarity: NPN ; VCE: 10 V; VBr>Thyristors - IGT: 32 mA; IT (RMS): 20 A; VDRM: 650 V<Br>NPN 2 GHz RF power transistor - @ f: 1900 MHz; @ f1: 1900 ; GUM: 7 dB; GUM @ f1: 7 dB; IC: 250 mA; Ptot: 250 mW; Polarity: NPN ; VCEO max: 8 V<Br>Schottky Barrier douBle diodes - Cd max.: 100@VR=4V pF; Configuration: dual series ; IF: 1 A; IFSM max: 10 A; IR max: 1@VR=25V mA; VFmax: 450@IF=1A mV; VR: 25 V<Br>Schottky Barrier diode - Cd max.: 10@VR=1V pF; Configuration: single ; IF max: 200 mA; IFSM max: 300 A; IR max: 2.3@VR=25VA; VFmax: 400@IF=10mA mV; VR max: 30 V<Br>Thyristors logic level - IGT: 0.2 mA; IT (RMS): 8 A; VDRM: 500 V<Br>Thyristors - IGT: 32 mA; IT (RMS): 20 A; VDRM: 800 V<Br>Schottky Barrier douBle diodes - Cd max.: 100@VR=4V pF; Configuration: dual c.a. ; IF: 1 A; IFSM max: 10 A; IR max: 1@VR=25V mA; VFmax: 450@IF=1A mV; VR: 25 V<Br>Schottky Barrier diode - Cd max.: 90@VR=0V pF; Configuration: single ; IF: 0.5 A; IFSM max: 2 A; IR max: 0.1@VR=35V mA; VFmax: 550@IF=0.5A mV; VR: 40 V<Br>AB 4C 4#12 PIN PLUG<Br>Single 12 Bits ADC, up to 40 MHz, 55 MHz or 70 MHz<Br>Silicon PIN diode<Br>NPN 14 GHz wideBand transistor<Br>PowerMOS transistor Logic level TOPFET - @ VIS: 5 V; ID: 15 A; NumBer of pins: 3 ; RDS(on): 0.125 mOhm; VDSmax: 50 V<Br>HDWR PLATE SER 3 FRNT MNT BLK<Br>OSCILLATORS 50PPM 0 70 3.3V 4 33.000MHZ TS 5X7MM 4PAD SMD<Br>Thyristors; logic level for RCD/GFI/LCCB applications - IGT: 0.2 (min 0.02) mA; IT (RMS): 1.0 A; VDRM: 600 V<Br>Thyristor logic level - IGT: 0.05 mA; IT (RMS): 0.8 A; VDRM: 400 V; VRRM: 400 V<Br>Thyristors logic level - IGT: 0.2 mA; IT (RMS): 0.8 A; VDRM: 200 V<Br>Thyristors logic level - IGT: 0.2 mA; IT (RMS): 0.8 A; VDRM: 400 V<Br>16KBitKBitKBitKBit1KBit串行I2C总线的EEPROM<Br>The CAT24FC02 is a 2-kB Serial CMOS EEPROM internally organized as 256 words of 8 Bits each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS<Br>The CAT24FC02 is a 2-kB Serial CMOS EEPROM internally organized as 256 words of 8 Bits each 该CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOS<Br>Single 10 Bits ADC, up to 30 MHz, 40 MHz or 50 MHz 16KBitKBitKBitKBitKBit串行I2C总线的EEPROM<Br>8-Pin SOIC High Speed - 10 MBit/s Logic Gate Output Optocoupler 16KBitKBitKBitKBitKBit串行I2C总线的EEPROM<Br>The CAT24FC02 is a 2-kB Serial CMOS EEPROM internally organized as 256 words of 8 Bits each 该CAT24FC02是一 KB的EEPROM的国568位每字举办的串行CMOS<Br>The CAT24FC02 is a 2-kB Serial CMOS EEPROM internally organized as 256 words of 8 Bits each 该CAT24FC02是一 KB的EEPROM的国256位每字举办的串行CMOS<Br>HDWR SPACER REAR MNT SER 3 BLK 16KBitKBitKBitKBitKBit串行I2C总线的EEPROM<Br>The CAT24FC02 is a 2-kB Serial CMOS EEPROM internally organized as 256 words of 8 Bits each CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS<Br>AB 7C 7#12 PIN PLUG 16KBitKBitKBitKBitKBit串行I2C总线的EEPROM<Br>RECTIFIER SBR DUAL 40A 40V 280A-ifsm 530mV-vf 0.5mA-ir ITO-220AB 50/TUBE 16KBitKBitKBitKBitKBit串行I2C总线的EEPROM<Br>
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