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NSL05TT1 74LV175N IB4805S 2779D 327SMOB D620P 1Q091 1884584
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    NESG240033 NESG240033-T1B

Renesas Electronics Corporation
Part No. NESG240033 NESG240033-T1B
OCR Text ...for any purpose relating to mil itary applicati ons or use by the military, including but not l imited to the development of weapons of mass de struction. renesas electronics products and technology may not be used for or incor porated i...
Description NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)

File Size 220.74K  /  10 Page

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    NESG240034-T1

Renesas Electronics Corporation
Part No. NESG240034-T1
OCR Text ...for any purpose relating to mil itary applicati ons or use by the military, including but not l imited to the development of weapons of mass de struction. renesas electronics products and technology may not be used for or incor porated i...
Description NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG)

File Size 210.83K  /  11 Page

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    MC-10118BF1-ENY-A

Renesas Electronics Corporation
Part No. MC-10118BF1-ENY-A
OCR Text ...for any purpose relating to mil itary applicati ons or use by the military, including but not l imited to the development of weapons of mass de struction. renesas electronics products and technology may not be used for or incor porated i...
Description MULTIMEDIA PROCESSOR FOR MOBILE APPLICATIONS

File Size 3,714.67K  /  66 Page

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    PS720C-1A-E3 PS720C-1A-F3

Renesas Electronics Corporation
Part No. PS720C-1A-E3 PS720C-1A-F3
OCR Text ...for any purpose relating to mil itary applicati ons or use by the military, including but not l imited to the development of weapons of mass de struction. renesas electronics products and technology may not be used for or incor porated i...
Description 4-PIN SOP, 0.1 Ω LOW ON-STATE RESISTANCE 60 V BREAK DOWN VOLTAGE 1.25 A CONTINUOUS LOAD CURRENT 1-ch Optical Coupled MOS FET

File Size 166.41K  /  12 Page

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    NESG210833 NESG210833-T1B

Renesas Electronics Corporation
Part No. NESG210833 NESG210833-T1B
OCR Text ...for any purpose relating to mil itary applicati ons or use by the military, including but not l imited to the development of weapons of mass de struction. renesas electronics products and technology may not be used for or incor porated i...
Description NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)

File Size 220.79K  /  10 Page

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    NR8800FS-CB NR8800FS-CB-15 PL10702EJ03V0DS

Renesas Electronics Corporation
Part No. NR8800FS-CB NR8800FS-CB-15 PL10702EJ03V0DS
OCR Text ...for any purpose relating to mil itary applicati ons or use by the military, including but not l imited to the development of weapons of mass de struction. renesas electronics products and technology may not be used for or incor porated i...
Description φ 80 μm InGaAs AVALANCHE PHOTO DIODE MODULE FOR OTDR APPLICATIONS

File Size 194.96K  /  10 Page

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    NESG220033 NESG220033-T1B

Renesas Electronics Corporation
Part No. NESG220033 NESG220033-T1B
OCR Text ...for any purpose relating to mil itary applicati ons or use by the military, including but not l imited to the development of weapons of mass de struction. renesas electronics products and technology may not be used for or incor porated i...
Description NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)

File Size 213.14K  /  10 Page

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    NX7639BB-AA

Renesas Electronics Corporation
Part No. NX7639BB-AA
OCR Text ...for any purpose relating to mil itary applicati ons or use by the military, including but not l imited to the development of weapons of mass de struction. renesas electronics products and technology may not be used for or incor porated i...
Description 1 625 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION

File Size 189.80K  /  8 Page

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    2SA1647-Z 2SA1647-15

Renesas Electronics Corporation
Part No. 2SA1647-Z 2SA1647-15
OCR Text ...for any purpose relating to mil itary applicati ons or use by the military, including but not l imited to the development of weapons of mass de struction. renesas electronics products and technology may not be used for or incor porated i...
Description SILICON POWER TRANSISTOR
PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

File Size 364.09K  /  7 Page

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    2SA1069-Z

Renesas Electronics Corporation
Part No. 2SA1069-Z
OCR Text ...for any purpose relating to mil itary applicati ons or use by the military, including but not l imited to the development of weapons of mass de struction. renesas electronics products and technology may not be used for or incor porated i...
Description PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

File Size 261.36K  /  8 Page

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