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POWEREX[Powerex Power Semiconductors]
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| Part No. |
FS16VS-5
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| OCR Text |
............................. 0.25 ID ......................................................................................... 16A
q GATE w...6.5 -- -- -- -- -- -- -- -- -- Typ. -- -- -- -- 3 0.19 1.5 10.0 1050 220 45 20 40 110 50 1.5 -- Max.... |
| Description |
Nch POWER MOSFET HIGH-SPEED SWITCHING USE
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| File Size |
46.29K /
4 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FDS4435_01 FDS4435 FDS4435NF073 FDS4435NL FDS443501
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| OCR Text |
...um Ratings
Symbol
V DSS V GSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
Parameter
Ratings
...6.7 A V GS = -10 V, ID = -8.8A, TJ =125C V GS = -10 V, V DS = -5 V, V DS = -5 V ID = -8.8 A
ID(on... |
| Description |
30V P-Channel PowerTrench MOSFET
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| File Size |
61.48K /
5 Page |
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it Online |
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SEME-LAB[Seme LAB]
SemeLAB
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| Part No. |
D2013UK D2013
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| OCR Text |
...herwise stated)
PD BVDSS BVGSS ID(sat) Tstg Tj * Per Side Semelab plc. Power Dissipation Drain - Source Breakdown Voltage * Gate - Source B...6
2.5 - j2.6
Figure 3 IMD Vs. Output Power.
Typical S Parameters
! # !Freq !MHz 100 20... |
| Description |
METAL GATE RF SILICON FET
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| File Size |
58.39K /
4 Page |
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it Online |
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SANYO[Sanyo Semicon Device]
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| Part No. |
FSS107 1305
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| OCR Text |
...ge Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg
0.595
1.27
0.43
0.1
1.8max
1
4
0.2
1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain SANYO : SOP8
Conditions
Ratings -20 10 ... |
| Description |
P-Channel Silicon MOSFET
From old datasheet system
Load Switching Applications
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| File Size |
40.55K /
4 Page |
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it Online |
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INTERSIL[Intersil Corporation]
Intersil, Corp.
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| Part No. |
FSYE13A0R4 FSYE13A0D FSYE13A0D1 FSYE13A0D3 FSYE13A0R FSYE13A0R1 FSYE13A0R3
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| OCR Text |
... . . . . . . . . . . . . . . . .ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...6.5 20 8 760 310 110 0.160 0.246 15 70 35 30 59 40 1.9 7.8 23 3.0 UNITS V V V V A A nA nA V ns ns ... |
| Description |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 12 A, 100 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET
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| File Size |
55.19K /
8 Page |
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Intersil, Corp.
INTERSIL[Intersil Corporation]
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| Part No. |
FSYE23A0R4 FSYE23A0D FSYE23A0D1 FSYE23A0D3 FSYE23A0R FSYE23A0R1 FSYE23A0R3
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| OCR Text |
... . . . . . . . . . . . . . . . .ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...6.1 18 7 750 180 50 MAX 5.0 4.0 25 250 100 200 2.77 0.33 0.538 15 30 45 20 57 38 1.9 7.4 20 3.0 UNIT... |
| Description |
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 8 A, 200 V, 0.33 ohm, N-CHANNEL, Si, POWER, MOSFET
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| File Size |
57.42K /
8 Page |
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New Jersey Semi-Conductor P...
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| Part No. |
IRF720
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| OCR Text |
...olute maximum ratings parameter id ? tc ? 25c continuous drain current id ? tc " 100c continuous drain current iom pulsed drain current (0 p...6 1.8 - - 2.7 - ? - - 13 2.2 7.2 10 14 30 13 4.5 7.6 350 64 8.1 max. - 1.8 2.5 - 4.0 - 250 1000 500 ... |
| Description |
400 Volt, 1.8 Ohm HEXFET TO-220AB Plastic Package
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| File Size |
1,007.35K /
3 Page |
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it Online |
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Price and Availability
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