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Bourns Electronic Solut... BOURNS[Bourns Electronic Solutions]
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| Part No. |
BUL791
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| OCR Text |
...125 W hFE 6 to 22 at VCE = 1 V, IC = 2 A Low Power Losses (On-state and Switching) Key Parameters Characterised at High Temperature Tight an...2A 2A 2A 2A 2A 8A (see Notes 4 and 5) TC = 90C (see Notes 4 and 5) TC = 90C 10 6 2 0.94 0.86 0.25 0.... |
| Description |
NPN SILICON POWER TRANSISTOR
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| File Size |
96.18K /
6 Page |
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POINN[Power Innovations Ltd]
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| Part No. |
BUL791
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| OCR Text |
...125 W hFE 6 to 22 at VCE = 1 V, IC = 2 A Low Power Losses (On-state and Switching) Key Parameters Characterised at High Temperature Tight an...2A 2A 2A 2A 2A 8A (see Notes 4 and 5) TC = 90C (see Notes 4 and 5) TC = 90C 10 6 2 0.94 0.86 0.25 0.... |
| Description |
NPN SILICON POWER TRANSISTOR
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| File Size |
113.04K /
7 Page |
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it Online |
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SemeLAB SEME-LAB[Seme LAB]
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| Part No. |
BUL74B
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| OCR Text |
...herwise stated)
VCBO VCEO VEBO IC IB Ptot Tj Tstg Semelab plc. Collector - Base Voltage(IE=0) Collector - Emitter Voltage (IB = 0) Emitter ...2A IB = 0.5A IB = 2A VCE = 4V f = 1MHz
V 10 100 10 10 100
A A A
18 10 11 8
50 30 30 20 0... |
| Description |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
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| File Size |
19.35K /
2 Page |
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it Online |
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