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on
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| Part No. |
MUR115
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| OCR Text |
...t voltage device in the voltage grouping. Typical reverse current for lower voltage selections can be estimated from these same curves if VR is sufficiently below rated VR. IF(AV) , AVERAGE FORWARD CURRENT (AMPS)
0.1 0.07 0.05
4.0
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| Description |
RECTIFIER DIODE,150V V(RRM),DO-41 From old datasheet system
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| File Size |
81.78K /
8 Page |
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MOTOROLA[Motorola, Inc] ON Semiconductor
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| Part No. |
MBR360 MBR350 MBR320 MBR330 MBR340
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| OCR Text |
...t voltage device in the voltage grouping. Typical reverse current for lower voltage selections can be estimated from these same curves if VR is sufficiently below rated VR. , AVERAGE FORWARD CURRENT (AMPS) 10
0.1 0.07 0.05 0.03 0.02
8... |
| Description |
3 A, 30 V, SILICON, RECTIFIER DIODE (MBR3xx) Axial Lead Rectifiers SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40, 50, 60 VOLTS 3 A, 20 V, SILICON, RECTIFIER DIODE
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| File Size |
119.54K /
6 Page |
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it Online |
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MOTOROLA[Motorola, Inc] MOTOROLA[Motorola Inc] ON Semi Motorola, Inc. Motorola Mobility Holdings, Inc.
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| Part No. |
MBRD620 MBRD640CT MBRD660CT MBRD620CT MBRD630CT MBRD650CT MBRD620CT_D ON0444
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| OCR Text |
...t voltage device in the voltage grouping. Typical reverse current for lower voltage selections can be estimated from these curves if VR is sufficient below rated VR.
Figure 2. Typical Reverse Current,* Per Leg
150C 1.0 0.7 0.5 0.3 0.2... |
| Description |
SWITCHMODE⑩ Power Rectifirers DPAK Surface Mount Package SWITCHMODE Power Rectifirers DPAK Surface Mount Package 6 AMPERES 20 TO 60 VOLTS From old datasheet system CAPACITOR, CERAMIC, 10PF, 50V, 10%, NPO, 0603 SWITCHMODEPower Rectifirers DPAK Surface Mount Package 3 A, 30 V, SILICON, RECTIFIER DIODE SWITCHMODEPower Rectifirers DPAK Surface Mount Package 3 A, 20 V, SILICON, RECTIFIER DIODE
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| File Size |
94.12K /
4 Page |
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it Online |
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SIEMENS AG SIEMENS[Siemens Semiconductor Group]
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| Part No. |
Q62702-P5053 SFH4860
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| OCR Text |
...bei einem Raumwinkel = 0.01 sr grouping of radiant intensity Ie in axial direction at a solid angle of = 0.01 sr Bezeichnung Description Strahlstarke Radiant intensity IF = 50 mA, tp = 20 ms Strahlstarke Radiant intensity IF = 1 A, tp = 1... |
| Description |
GaAlAs-Lumineszenzdiode 660 nm GaAlAs Light Emitting Diode 660 nm From old datasheet system
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| File Size |
41.01K /
5 Page |
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it Online |
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Price and Availability
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