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CEL[California Eastern Labs]
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| Part No. |
NE664M04-T2-A NE664M04
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| OCR Text |
...IENCY vs. INPUT POWER
30 25 20 GP 15 10 5 0 -15 c -10 -5 0 5 10 VCE = 3.2 V, f = 0.9 GHz ICq = 20 mA, 1/2 Duty 300
OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, & COLLECTOR EFFICIENCY vs. INPUT POWER
30 300 VCE = 3.2 V, f = 2.4 GHz ICq ... |
| Description |
MEDIUM POWER NPN SILICON HIGH FRQUENCY TRANSISTOR
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| File Size |
195.30K /
10 Page |
 View
it Online |
Download Datasheet
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NEC Corp.
NEC[NEC]
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| Part No. |
NE664M04-T2 NE664M04
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| OCR Text |
...IENCY vs. INPUT POWER
30 25 20 GP 15 10 5 c 0 -15 -10 -5 0 5 10 0 15 0 -5 0 5 10 150 100 50 VCE = 3.2 V, f = 0.9 GHz ICq = 20 mA, 1/2 Duty 300
OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, & COLLECTOR EFFICIENCY vs. INPUT POWER
30 300 V... |
| Description |
MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR
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| File Size |
126.05K /
9 Page |
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it Online |
Download Datasheet |
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Duracell
CEL[California Eastern Labs]
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| Part No. |
NE677M04-T2-A NE677M04
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| OCR Text |
... EFFICIENCY vs. INPUT POWER
25 GP
VCE = 3.2 V f = 0.9 GHz Icq = 8 mA (RF OFF)
OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER
250
25
VCE = 2.8 V f = 1.8 GHz Icq = 8 mA (RF OFF)
250
Collector C... |
| Description |
MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR
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| File Size |
127.21K /
8 Page |
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it Online |
Download Datasheet |
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NIC Components, Corp.
Electronic Theatre Controls, Inc.
California Eastern Laboratories
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| Part No. |
NE677M04 NE677M04-T2
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| OCR Text |
... EFFICIENCY vs. INPUT POWER
25 GP
VCE = 3.2 V f = 0.9 GHz Icq = 8 mA (RF OFF)
OUTPUT POWER, POWER GAIN, COLLECTOR CURRENT, COLLECTOR EFFICIENCY vs. INPUT POWER
250
25
VCE = 2.8 V f = 1.8 GHz Icq = 8 mA (RF OFF)
250
Collector C... |
| Description |
NECs MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR 邻舍中功率NPN硅高频晶体管
From old datasheet system
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| File Size |
60.56K /
7 Page |
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it Online |
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Panasonic
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| Part No. |
2SC3354
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| OCR Text |
...ol VCBO VEBO VBE hFE fT Crb Cre GP Conditions IC = 100 A, IE = 0 IE = 10 A, IC = 0 VCB = 10 V, IE = -2 mA VCB = 10 V, IE = -2 mA VCB = 10 V,...IB = 300 A 30 250 A 200 A 20 150 A 100 A 10 50 A
40
300
30
200
20
10
100
0 0 2... |
| Description |
Small-signal device - Small-signal transistor - High-Frequency for Tuners
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| File Size |
87.52K /
5 Page |
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it Online |
Download Datasheet |
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SIEMENS[Siemens Semiconductor Group]
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| Part No. |
Q62702-F1189 BFQ82
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| OCR Text |
... Noise Parameters f GHz Fmin dB Gp(Fmin) dB MAG opt ANG RN N - F50 dB Gp(F50 ) dB
IC = 10 mA, VCE = 8 V, Z0 = 50 0.01 0.8 2.0 1 1.15 2.3 - 15.7 9.5 - - (ZS = 75 ) - - - - - - - - 1.05 1.35 2.8 - 14.7 7.5
IC = 30 mA, VCE = 8 V, Z0 =... |
| Description |
NPN Silicon RF Transistor (For low-noise, high-gain amplifiers up to 2 GHz. Linear broadband applications at collector currents up to 40 mA.)
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| File Size |
399.68K /
18 Page |
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it Online |
Download Datasheet |
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